نتایج جستجو برای: ofet
تعداد نتایج: 156 فیلتر نتایج به سال:
Angular-shaped naphthalene tetracarboxylic diimides for n-channel organic transistor semiconductors.
A series of compounds based on the angular-shaped naphthalene tetracarboxylic diimide core have been synthesized, characterized and used as active layers of organic field-effect transistors (OFETs). The fabricated OFET devices exhibit n-type semiconducting characteristics, demonstrating the first examples of semiconductors based on angular-shaped naphthalene tetracarboxylic diimides.
We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (~11 V) and relatively good endurance properties (~over 100 cycles).
We propose an organic field effect transistor (OFET)-based sensor design as a new and innovative platform for anion detection. OFETs could be fabricated on low-cost plastic film substrates using printing technologies, suggesting that OFETs can potentially be applied to practical supramolecular anion sensor devices in the near future.
Three vinylene linked diketopyrrolopyrrole based donor-acceptor (D-A) copolymers have been synthesized with phenyl, thienyl, and selenyl units as donors. Optical and electronic properties were investigated with UV-vis absorption spectroscopy, cyclic voltammetry, near edge X-ray absorption spectroscopy, organic field effect transistor (OFET) measurements, and density functional theory (DFT) calc...
With the increasing performance of organic semiconductors, contact resistances become an almost fundamental problem, obstructing the accurate measurement of charge carrier mobilities. Here, a generally applicable method is presented to determine the true charge carrier mobility in an organic field-effect transistor (OFET). The method uses two additional finger-shaped gates that capacitively gen...
OFET devices based on single-crystals of two different porphyrin derivatives display excellent mobilities of 2.57 and 0.48 cm(2) V(-1) s(-1). Although they generate similar J-aggregations, the dramatic enhancement of mobility obtained using porphyrin 1 is due to the well-confined secondary structural arrangement caused by substituents on the porphyrin ring.
Dicyanomethylene-substituted quinoidal mixed oligomer was synthesized as a new soluble organic semiconductor, and OFET devices fabricated with a spin-coated thin film of showed ambipolar FET characteristics with electron and hole mobilities of 1.6 x 10(-2) and 7.0 x 10(-3) cm(2) V(-1) s(-1), respectively.
A double helicenic benzothieno–benzothiophene derivative, showing homochiral layers of MM and PP enantiomers in the single crystal phase, behaves as a p-type semiconductor thin-film OFET devices fabricated by both spin coating evaporation.
The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. operation the OFET depends on two essential parameters: insulation between semiconductor layer electrode capacitance insulator. In this work, electrical behavior a pentacene-based with top contact / bottom was studied. Organic polyvinyl al...
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