We have fabricated field effect transistors in order to study charge trapping in pentacene transistors and charge noise in a variety of organic field effect transistors.

In this study, we investigated chemically exfoliated two-dimensional (2-D) nanoflakes of molybdenum disulfide (MoS2) as charge-storing elements for use in organic multilevel memory devices (of the printed/flexible non-volatile type) based on organic field-effect transistors (OFETs) containing poly(3-hexylthiophene) (P3HT). The metallic MoS2 nanoflakes were exfoliated in 2-methoxyethanol by the ...

A possibility of the creation of potentiometric biosensor by adsorption of enzyme urease on zeolite was investigated. Several variants of zeolites (nano beta, calcinated nano beta, silicalite, and nano L) were chosen for experiments. The surface of pH-sensitive field-effect transistors was modified with particles of zeolites, and then the enzyme was adsorbed. As a control, we used the method of...

Flexible Electronics In article number 2204804, Ali Nawaz, Carlos C. B. Bufon, and co-workers compare the performance of planar organic transistors with emerging vertical-transistor technology, outlining critical device fabrication material-design strategies, discussing their role function in a wide range flexible electronics applications. Showcasing research from Micro Nano Facility (MNF-SD), ...

To simplify the architecture of a neuromorphic system, it is extremely desirable to develop synaptic cells with the capacity of low operation power, high density integration, and well controlled synaptic behaviors. In this study, we develop a resistive switching device (ReRAM)-based synaptic cell, fabricated by the CMOS compatible nano-fabrication technology. The developed synaptic cell consist...

There is broad interest in surface functionalization of 2D materials and its related applications. In this work, we present a novel graphene layer transistor fabricated by introducing fluorinated graphene (fluorographene), one of the thinnest 2D insulator, as the gate dielectric material. For the first time, the dielectric properties of fluorographene, including its dielectric constant, frequen...

some issues; leakage, tunneling currents, boron diffusion are threatening sio2 to be used as a good gate dielectric for the future of the cmos (complementary metal- oxide- semiconductor) transistors. for finding an alternative and novel gate dielectric, the nio (nickel oxide) and pva (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural properties w...

Related Articles Switching quantum transport in a three donors silicon fin-field effect transistor Appl. Phys. Lett. 99, 242102 (2011) Contact effects in high performance fully printed p-channel organic thin film transistors APL: Org. Electron. Photonics 4, 271 (2011) High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer APL: Org. Electron. Photonics 4, 27...

A lot of molecular (magnetic) conductors are prepared largely using charge-transfer (CT) salts of donor molecules with acceptor molecules or nonmagnetic or magnetic anions such as metal halides and oxides; their CT salts are usually obtained as bulk crystals, which are used to elucidate the electrical conducting (magnetic) properties. In contrast, a small number of micro/nano-crystals of the mo...