This paper describes the development of Tata Nano Engine Management System and the related electrical and electronics architecture. The design criteria for the electrical and electronics architecture are discussed in detail in the body of the paper. When the Nano project was first conceived, the existing low cost car in India was not affordable by common people. The Nano project was targeted fo...

Advancement in the field of nanotechnology and its applications to the field of medicines and pharmaceuticals has revolutionized the twentieth century. Nanotechnology [1] is the study of extremely small structures. The prefix “nano” is a Greek word which means “dwarf ”. The word “nano” means very small or miniature size. Nanotechnology is the treatment of individual atoms, molecules, or compoun...

Packaging and interconnect technologies are critical to the advancement of micro-scale and nano-scale systems. This paper will review some examples of our studies on flip-chip assembly, solder self-assembly, automated tuning and fixing, flexible circuits, atomic layer deposition and liquid crystal polymer for manufacturable and reliable microelectromechanical systems (MEMS). In addition, we wil...

Information (electronic and photonic) and renewable energy (solar energy, fuel cells, batteries, etc.) technologies have reached an advanced stage in their development— realizing engineering limits in cost-effective improvement for current technological approaches. The feature sizes of the latest generations of electronic devices are approaching atomic dimensions, interconnect bottlenecks are l...

Invention of Transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key to the development of nano electronics technology. This paper offers a brief review of some of the most popular MOSFET structure designs. The scaling down of planar bulk MOSFET proposed by the Moore’s Law has been saturated due to short channel effects a...

ELECTRONIC AND OPTICAL MATERIALS A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology B: Concepts in Molecular and Organic Electronics C: CMOS Gate-Stack Scaling—Materials, Interfaces, and Reliability Implications D: Materials, Processes, and Reliability for Advanced Interconnects for Microand Nano-Electronics E: Science and Technology of Chemical Mechanical Planarization F...

In order to expand the use of nanoscaled silicon structures we present a new etching method that allows us to shape silicon with sub-10 nm precision. This top-down, CMOS compatible etching scheme allows us to fabricate silicon devices with quantum behavior without relying on difficult lateral lithography. We utilize this novel etching process to create quantum dots, quantum wires, vertical tran...

G. Yamahata,1,2 T. Kodera,1,3,4 H. O. H. Churchill,2 K. Uchida,5 C. M. Marcus,2,* and S. Oda1 1Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan 2Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA 3Institute for Nano Quantum Information Electronics, The University of Tokyo, Tokyo 153-8505, Japan...