Spatial manipulation of current flow in graphene could be achieved through the use of a tilted p-n junction. We show through numerical simulation that a pseudo-Hall effect i.e., nonequilibrium charge and current density accumulating along one of the sides of a graphene ribbon can be observed under these conditions. The tilt angle and the p-n transition length are two key parameters in tuning th...

The Dye Sensitized Solar Cell (DSSCs) has emerged as attractive and promising solar cells in recent years. It offers technically and economically viable option to p-n junction solar cells. However, the efficiencies of DSSCs could not compete with those of silicon solar cells. Numerous researches have been done to enhance the efficiencies of these cells over the past decades. Efficiencies up to ...

Over the past decade, protein and genetic abnormalities have gradually been unveiled for most types of hereditary epidermolysis bullosa (EB). Much understanding has been gained regarding the underlying pathogenic mechanisms of this group of diseases. To appreciate these new advances and their clinical applications, it is important to understand the basic molecular organisation of the normal der...

Graphene is a new material whose unique electronic structure endows it with many unusual properties [1]. A monolayer graphene is a gapless two-dimensional (2D) semiconductor with a massless electron-hole symmetric spectrum near the corners of the Brillouin zone, ǫ(k) = ±~v|k|, where v ≈ 10 cm/s. The concentration of these “Dirac” quasiparticles can be accurately controlled by the electric field...

We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structure utilizing as a new building block in different semiconductor devices. The potential distribution through the p-n-junction is calculated and the analytical expressions are derived to compute the depletion region widths. We show that the widths of space charge layers, surrounding the core, are t...

In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N₂ ambient. MWA has the advantage of being diffusion-le...

The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during development highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons low-energy electrons (below 1 keV). For many years it was believed that junction created by chemical vapor deposition boron on n-type crystalline a p-n junction,...