نتایج جستجو برای: multi quantum well
تعداد نتایج: 2169346 فیلتر نتایج به سال:
Rational design and synthesis of nanowires with increasingly complex structures can yield enhanced and/or novel electronic and photonic functions. For example, Ge/Si core/shell nanowires have exhibited substantially higher performance as field-effect transistors and low-temperature quantum devices compared with homogeneous materials, and nano-roughened Si nanowires were recently shown to have a...
Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa str...
This paper presents the optical characteristics of a quantum well doped InP nanocavity.The resonance wavelength of the nanocavity and the optical field intensity is calculated before and after presence of the quantum wells. The resulting huge filed intensity of about 1.2×108 respect to the incident field is the effect of quantum wells placed in vicinity of center of nanocavity.
چکیده ندارد.
Multicolor infrared (IR) detectors are very important to advanced IR sensor systems. An IR detector with multicolor capability can offer a better target discrimination, tracking, and identification, as well as temperature determination. Multicolor IR sensors are also very useful in industry for gas leakage detection, chemical analysis, and for environmental sensing and control. As the IR techno...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید