This paper describes an original methodology for accurately modeling MOSFET process parameter variations. As compared to other process parameter variation modeling methods, the proposed methodology is capable of correctly modeling not only differences of process/model parameters, but also the process parameter variations for individual devices. This capability is very important for popular anal...

This paper presents a unit test structure for investigation of bulk effects critical to scalable MOSFET models at gigahertz frequencies. The results are transformed into a generalized representation which may be used in conjunction with existing compact models. The gate-modified test structure is compatible with standard CMOS technology and reveals the dependence of diffusion bias on substrate ...

Design of the power amplifier for ultrasonic transducer excitation is presented. We assumed that the amplifier output impedance will be significantly lower than the transducer input impedance. Therefore we suggest to used the transformer as voltage step-up and impedance matching element. The transformer influence on the ultrasonic transducer bandwidth and the power transfer efficiency are analy...

In this paper, an analytical quantum correction model for ultrathin oxide MOSFET devices is proposed. With this novel SPICE-compatible model, the gate tunneling current is precisely calculated without any complicated quantum mechanical models. The proposed model is optimized with respect to (i) the position of the charge concentration peak, (ii) the maximum of the charge concentration, (iii) th...

Abstract This paper presents accurate small-signal modeling of RF CMOS, valid from DC to GHz ranges, using device simulation and analytical modeling. Distributed NQS effects in terms of circuit parameters are discussed and an estimation of the limit up to which quasi-static MOSFET models are reasonable is presented. The impact of the substrate network through gmb multiplication on terminal ac c...

An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DGMOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical ...

In this paper, we discuss some important issues in MOSFET modeling for radio-frequency (RF) integratedcircuit (IC) design. We start with the introduction of the basics of RF modeling. A simple sub-circuit model is presented with comparisons of the data for both y parameter and fT characteristics. Good model accuracy is achieved against the measurements for a 0.25μm RF CMOS technology. The high ...

Non-planar structures have been identified as promising structure for next device generation in the nanoelectronic era. However, the continuous device dimension scaling into nano regime eventually requires more sophisticated model due to the limitation of the existing models. A model for non-planar MOSFET structure was elaborated in this paper, especially for device with pillar structure, using...

Nanoscale CMOS Modeling by Mohan Vamsi Dunga Doctor of Philosophy in Engineering Electrical Engineering and Computer Sciences University of California, Berkeley Professor Ali M. Niknejad, Chair Since its inception almost four decades ago, the conventional planar bulk silicon MOSFET has been scaled relentlessly in accordance with the Moore’s Law. However, as the state-of-the-art MOSFET makes inr...