High resistivity silicon with different concentrations of the impurities oxygen and carbon were irradiated with neutrons and charged particles. The DLTS method is used to determine the defect parameters. During irradiation of silicon with particles lattice atoms are displaced and the primary defects silicon interstitials and vacancies form the impurity defects Ci, CiCs, CiOi and V Oi. In the de...

Tokapole II is a tokamak with a four-node poloidal divertor. Impurity concentrations, line radiated power, and impurity behavior have been studied in Tokapole II discharges with two VUV spectrometers, o one of which acquires the VUV spectrum (400-1300 A) with a single discharge. Oxygen (3-5% of the electron density) is the dominant �lpurity, and the measured total radiated power is 15-30% of th...

Six impurities in pantoprazole sodium bulk drug substance were detected by a simple high performance liquid chromatographic method (HPLC) whose area percentage ranged from approximately 0.05 to 0.34%. Liquid chromatography-mass spectrometry (LC-MS) was performed to identify the molecular weight of the impurities. A thorough study was undertaken to characterize these impurities. These impurities...

Monolayer System Physisorbed onto Graphite: Argon and Krypton Patch Impurities M. W. Roth Department of Natural Sciences, Texas A&M International University, 5201 University Boulevard, Laredo, Texas 78041 Received February 10, 1998. In Final Form: December 24, 1998 A constant density (F ) 1) constant temperature molecular dynamics method with periodic boundary conditions is utilized to examine ...

This paper reports the atom probe analysis results of the oxygen dissolved in the as-cast amorphous and crystallized Zr65Cu15Al10Pd10 and Zr65Cu17.5Ni10Al7.5 alloys. Impurity oxygen ranging from 0.1 to 1 at.% is dissolved uniformly in the as-quenched Zr65Cu15Al10Pd10 and Zr65Cu17.5Ni10Al7.5 amorphous alloys even though the oxygen is not added intentionally. When the Zr65Cu15Al10Pd10 alloy is cr...

This article investigates the relationship between chemical composition and electrophysical properties of p- n-type multicrystalline silicon ingots based on metallurgical with a purity 99.99 at.%. In particular, role impurity-impurity interactions in production multisilicon by Bridgman vertical method is evaluated order to identify approaches controlling this process effectively. The phase equi...

Abstract Boron (B) and phosphorus (P) are the most problematic impurities to be removed in production of solar-grade silicon by metallurgical process. In this work, distribution B P between CaO-(La 2 O 3 )-SiO slags Si-10 mass pct Sn melt was experimentally studied. coefficient increased from 2.93 binary CaO-SiO slag 3.33 3.65 with 10 La additions, respectively. followed acid-leaching experimen...

The electron state structure of isolated interstitial O atoms in real InN (containing clusters of InN, clusters of InON and clusters of non-stoichiometric InN:In) is the subject of investigation in this paper. It is shown that for the interstitial O atoms the corresponding symmetry is equivalent to that of an O atom in vacuum if the dielectric permittivity of InN is considered, and therefore th...

Point defects in epitaxial GaN and ZnSe semiconductor layers have been studied using a low-energy positron beam. Ga vacancies are found to be present in n-type GaN grown by metal organic chemical vapor deposition, where the conductivity is due to residual oxygen. When n-type silicon impurity doping is done, clearly less vacancies are observed. In Mgdoped p-type and semi-insulating materials the...