Highly luminescent GaAs 1~x N x alloys were successfully grown by atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE). The nitrogen composition x of as high as 5.6% was obtained using trimethylgallium (TMGa), tertiarybutylarsine (TBAs) and dimethylhydrazine (DMHy) precursors. In-situ and post-growth rapid thermal annealing was performed to enhance the optical quality of the material. ...

Current state-of-the-art epitaxial growth techniques employ various metalorganic and hydride gases to deliver constituent species to the substrate surface, particularly high vapor pressure species such as phosphorus and sulfur. Gas source molecular beam epitaxy (GSMBE) utilizes hydride gas sources and solid elemental sources. The more conventional growth approach, molecular beam epitaxy (MBE), ...

We report on the large area realization of GaN photonic crystal slabs with semipolar InGaN quantum wells (QWs) using laser interference lithography and selective area metalorganic vapour phase epitaxy (MOVPE). Directional extraction of guided modes was observed in angle-resolved photoluminescence spectroscopy (ARPL), and the photonic crystal slab dispersion relation was measured. A comparison o...

Recently, AlN bulk crystals with very high crystal quality have become available in diameters up to 25 mm. Metalorganic vapor phase epitaxy (MOVPE) allows to grow either very pure homoepitaxial AlN layers, or layers with controlled silicon (n-type) doping. We investigated such layers by low-temperature photoluminescence (PL), reflectance, and ellipsometry. We find very narrow lines, which allow...

We propose and evaluate the use of metallocene compounds as reducing agents for the chemical vapour deposition (and specifically atomic layer deposition, ALD) of the transition metal Cu from metalorganic precursors. Ten different transition metal cyclopentadienyl compounds are screened for their utility in the reduction of Cu from five different Cu precursors by evaluating model reaction energi...

substrates by metalorganic chemical vapor deposition Maxwell Zheng, Zhibin Yu, Tae Joon Seok, Yu-Ze Chen, Rehan Kapadia, Kuniharu Takei, Shaul Aloni, Joel W. Ager, Ming Wu, Yu-Lun Chueh, and Ali Javey Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA Lawrence Berkeley National Laboratory, Material Sciences Division, Berkeley, C...

CeO2/La2Zr2O7/Ni piled-up structure is a very promising architecture for YBa2Cu3O7 (YBCO) coated conductors. We have grown YBCO/CeO2/ LZO/Ni epitaxial structures by metalorganic decomposition (MOD) and metalorganic chemical vapour deposition (MOCVD) methods. The crystallographic quality of the CeO2 layer is not well determined by conventional X-Ray Diffraction (XRD) due to the superposition of ...

In this work, the position-controlled growth of GaN nanowires on sapphire wafers and on N-polar GaN templates is presented using selective area vapor-liquid-solid growth in a metalorganic vapor phase reactor. Misoriented sapphire wafers and TMIn acting as surfactant are applied in order to achieve N-polar GaN buffer layers with high crystal and surface quality, suitable for a subsequent nano-pa...

The microstructure of nominally undoped epitaxial wurtzite-structure o-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped a-GaN films have an ordered point-defect structure. A model of this ...