We successfully obtained an 0.18μm gate MESFET with a high breakdown voltage (Vbd) of 7V, high current gain cut off frequency (fT) of 100 GHz, and sufficient transconductance (Gm) larger than 500mS/mm for high-speed front end ICs of optical communications. In addition, excellent uniformity and reproducibility of device characteristics, such as the standard deviation (std.) of threshold Voltage ...

MESFET are used in circuitsof gigahertz frequencies as they based on gallium arsenide (GaAs) having electron mobility six times higher than that of silicon. An analytical model simulating different device current-voltage characteristics, i.e., output conductance and transconductance a 0.3μm gate with temperature dependence is proposed. The validated by comparing the results proposed those numer...

(Abstract) Accurate small and large-signal models of metal-semiconductor field effect transistor (MESFET) devices are essential in all modern microwave and millimeter wave applications. Those models are used for robust designs and fabrication development. The sophistication of modern communication systems urged the need of monolithic microwave integrated circuits (MMICs), which consists of many...

in this paper, we examine the effect of the energy difference between the l- and the -valleys in compound semiconductor materials, carrier effective mass, and the scattering processes on the electron transport characteristics in mesfets. to do this, we use the monte carlo simulation to demonstrate the superiority of the ingaas mesfet, made on a semi-insulating inp substrate, over both inp and ...

in this paper we propose and simulate a new heterostructure mesfet, called δ-doped ldd hmesfet. to improve carrier velocity in vicinity of the source in channel of gaas mesfet, one can replace source with alxga 1-x as. by increasing al content, discontinuity of hetero-interface could be increased. therefore, the velocity increases in the low field. however, increasing al mole fraction in excess...