A material removal rate (MRR) model as a function of abrasive weight concentration has been proposed for chemical mechanical planarization/polishing (CMP) by extending a material removal model developed earlier in 2001 and 2002. With an increase of the weight concentration of abrasives, three regions of material removal exist: a chemically dominant and rapid increasing region, a mechanically do...

objective : iud is a highly effective, safe, private, long-acting, and rapidly reversible method of contraception with few side effects. the aim of this study was to assess the continuation rate and cause of iud discontinuation in isfahan, iran. materials and methods: this historical cohort study wascarried out on 12 randomly selected health centers of isfahan province in 2007. 244 literate mar...

We present experimental and simulation results for focused ion beam (FIB) milling of microchannels in lithium niobate in this paper. We investigate two different cuts of lithium niobate, Y- and Z-cuts, and observe that the experimental material removal rate in the FIB for both Y-cut and Z-cut samples was 0.3 μm(3)/nC, roughly two times greater than the material removal rate previously reported ...

Received: 20 October 2014 / Accepted: 15 November 2014 Abstract: An approach for determination of the best cutting parameters leading to maximum material removal rate in machining D2 (Die Steel) on vertical milling centre is used. The Response Surface Methodology technique is applied to obtain optimum values of considered parameters in machining D2 (Die Steel) with four flutes carbide end mill ...

A picosecond laser has been used to establish the material removal rate of metals. Varied processing parameters include laser power, pulse frequency and scanning velocity. The laser beam was manipulated using a galvanometric scan head with a 100 mm focusing optic. Maximum power of the laser in the IR was 2 W and 700 mW in the UV. Scanning velocities were varied between 100 to 800 mm/s. Material...

Recently, a comprehensive model has been developed by Luo and Dornfeld (“Material removal mechanism in chemical mechanical polishing: theory and modeling,” IEEE Trans. Semiconduct. Manufact., vol. 14, pp. 112–133, May 2001) to explain the material removal mechanism in chemical mechanical planarization (CMP). Based on the model, the abrasive size distribution influences the material removal from...

As a crucial substrate material for optoelectronic materials, sapphire has important applications in both military and civilian fields. In order to achieve the final processing quality of double-sided chemical mechanical polishing (DS-CMP) is necessary process, which also guarantee preparation high-end LED chips. this article, DS-CMP plan based on Box-Behnken design obtained experimented. Then,...