We report the fabrication, at low-temperature, of solution processed graphene transistors based on carefully engineered graphene/organic dielectric interfaces. Graphene transistors based on these interfaces show improved performance and reliability when compared with traditional SiO(2) based devices. The dielectric materials investigated include Hyflon AD (Solvay), a low-k fluoropolymer, and va...

SiO2 coated Fe3O4 submicrometer spherical particles (a conducting core/insulating shell configuration) are fabricated using a hydrothermal method and are loaded at 10 and 20 vol % into a bisphenol E cyanate ester matrix for synthesis of multifunctional composites. The dielectric constant of the resulting composites is found to be enhanced over a wide frequency and temperature range while the lo...

The demand for a new generation of high-temperature dielectric materials toward capacitive energy storage has been driven by the rise of high-power applications such as electric vehicles, aircraft, and pulsed power systems where the power electronics are exposed to elevated temperatures. Polymer dielectrics are characterized by being lightweight, and their scalability, mechanical flexibility, h...

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu3Ti4O12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced-up to about 10 times - by using ...

A quasi-analytic model has been developed to examine energy conversion during the microwave sintering of a ceramic that is surrounded by a susceptor. Low-loss ceramics, such as ZrO2, couple poorly with microwave radiation at low temperatures; however, because the dielectric loss usually increases rapidly as temperature increases, coupling improves dramatically at high temperatures. To improve h...

Both Pand N-channel MOSFETs with Schottky barrier silicide source/drain (S/D), high-K gate dielectric and metal gate were successfully fabricated using a simplified low temperature process. The highest temperature after the high-K dielectric formation is 420 C. PMOSFETs with PtSi S/D show excellent electrical performance of an Ion=Ioff 10 10 and a subthreshold slope of 66 mV/dec, similar to tho...