نتایج جستجو برای: ld t cntfet

تعداد نتایج: 711552  

Journal: :Journal of immunology 1999
X Z Yu S Bidwell P J Martin C Anasetti

To follow the fate of alloreactive T cell effectors in graft-vs-host disease, Ld-specific CD8+ T cells from C57BL/6 2C TCR-transgenic donors were transplanted into sublethally irradiated (750 cGy) Ld+ or Ld- recipients. In Ld- C57BL/6 or (BALB/c-dm2 x C57BL/6)F1 recipients, naive 2C T cells engrafted and survived long term, but did not acquire effector function. In Ld+ (BALB/c x C57BL/6)F1 reci...

Journal: :Journal of immunology 1998
L R Soares P L Orr M R Garovoy G Benichou

Recent studies using synthetic altered peptide ligands (Analogues) have led to the fine dissection of TCR-mediated T cell functions elicited by Ag recognition. Certain Analogues behave as full agonists of the antigenic peptide while others are partial agonists in that they only trigger selected T cell functions. Additionally, peptide Analogues can behave as antagonists by inhibiting functions o...

2000
De-Hai Zhang

Boomerang measured the first peak in CMBR to be at location of lD = 196±6, which excites our strong interesting in it. A widely cited formula is lD ≃ 200Ω T to estimate the cosmic total density. Weinberg shows it is not correct and should be lD ∝ Ω T near the interest point (Ωm,ΩΛ) = (0.3, 0.7). We show further that it should be lD ∝ Ω T Ω m or Ω T Ω Λ near the same point in the more veracious ...

1998
Christine T. Cheng

The i-local distinguishing number of G, denoted by LD i (G), was deened in 3]. Let T be a tree on n > 2 vertices with maximum degree bounded by some constant k. It is shown that LD 1 (T) = O(p n) and that for some trees this bound is tight. The result is extended to show that LD i (T) = O(n 1=(i+1)).

2016
Pankaj Jha P K Sharma

The Field Effect Transistor using nanotechnology is known as Carbon Nanotube Field Effect Transistors (CNTFET). Which promising nano-scaled devices for implementing high performance very dense and low power circuits. A Carbon Nanotube Field Effect Transistor refers to a FET with a single CNT or an array of CNT's as the channel material instead of bulk silicon in the traditional MOSFET structure...

2013
Dr. Sharmila Meenakshi

In the world of Integrated Circuits, Complementary Metal–Oxide– Semiconductor (CMOS) has lost its credentiality during scaling beyond 32nm. Scaling causes severe Short Channel Effects (SCE) which are difficult to suppress. As a result of such SCE many alternate devices have been studied. Some of the major contestants include Multi Gate Field Effect Transistor (MuGFET) like FinFET and Carbon Nan...

2017
Inkyu Hwang Kwangmi Kim Sojin Choi Maria Lomunova

The stability of peptide-MHC complex (pMHC) is an important factor to shape the fate of peptide-specific T cell immune response, but how it influences on T cell activation process is poorly understood. To better understand that, we investigated various T cell activation events driven by Ld MHCI loaded with graded concentrations of P2Ca and QL9 peptides, respectively, with 2C TCR Tg T cells; the...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی شیراز - دانشکده مهندسی برق و الکترونیک 1392

از مهمترین نیازمندی ها برای طراحی ابزارهای قابل حمل مانند گوشی های هوشمند مصرف پایین انرژی بر کارکرد می باشد. در بسیاری از کاربردها، حافظه ها بخش عمده ای از کل انرژی سیستم را مصرف می کنند. از این رو درکاربردهای توان محدود که سرعت در درجه دوم اهمیت پیدا می کند، مفید است که عملیات های خواندن و نوشتن برای یک سلول sram با کمترین ولتاژ کاری ممکن انجام گیرد. چالش اصلی در طراحی sram مرسوم سازش بین نیا...

M AKMALI, M VESSAL,

Twenty five blood samples from 6-month to 5-year old children with visceral leishmaniasis were analysed for various enzymes. Aspartate transaminase (AST), alanine transaminase (ALT), lactate dehydrogenase (LD) and its various isoenzymes were estimated in the serum, while glucose 6-phosphate dehydrogenase (G6PD) was measured in red blood cells. For comparison, blood samples from healthy chi...

Journal: :Computer Physics Communications 2007
P.-Y. Chen Y.-L. Shao K.-W. Cheng K.-H. Hsu Jong-Shinn Wu J.-P. Ju

Analysis of the electrostatic characteristics and the gate capacitance of typical nanostructured carbon nanotube field effect transistors (CNTFETs) were performed numerically. A previously developed parallelized electrostatic Poisson’s equation solver (PPES) is employed, coupled with a parallel adaptive mesh refinement (PAMR) to improve the numerical accuracy near the region where variation of ...

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