Epitaxial Al-InAs heterostructures appear as a promising materials platform for exploring mesoscopic and topological superconductivity. A unique property of Josephson junction field effect transistors (JJ-FETs) fabricated on these is the ability to tune supercurrent using metallic gate. Here, we report fabrication measurement gate-tunable JJ-FETs in which gate dielectric contact with InAs produ...

Quantum-dot Cellular Automata (QCA) is a prominent paradigm that is considered to continue its dominance in thecomputation at deep sub-micron regime in nanotechnology. The QCA realizations of five-input Majority Voter based multilevel parity generator circuits have been introduced in recent years. However, no attention has been paid towards the QCA instantiation of the generic (n-bit) even and ...

DNA gyrase introduces negative supercoils into DNA in an ATP-dependent reaction. DNA supercoiling is catalyzed by a strand-passage mechanism, in which a T-segment of DNA is passed through the gap in a transiently cleaved G-segment. Strand passage requires the coordinated closing and opening of three protein interfaces in gyrase, the N-gate, DNA-gate, and C-gate. We show here that DNA binding to...

Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, which the in-plane electronic band structure anisotropy often originates from low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image energy bands monoclinic gallium telluride (GaT...

This paper presents a new design for 14 transistor single bit full adder, implemented using five transistor XNOR/XOR cell and transmission gate multiplexer. For transmission gate multiplexer complementary gate control signals are required and in 14 transistor full Adder both XOR and XNOR signals are generated. XNOR/XOR cell shows high power consumption than single XNOR gate. So, 8 transistor fu...

Abstract Layered group-IV monochalcogenides, including GeS, GeSe, SnS, and SnSe, garner attention because of their anisotropic structures properties. Here, we report on the growth GeS microribbons via chemical vapor transport (CVT), which affords each them with a low-symmetry orthorhombic structure optical electronic The single-crystalline nature microribbon, has typical thickness ~30 nm, is co...

We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence o...

Graphene and other layered materials, such as transition metal dichalcogenides, have rapidly established themselves as exceptional building blocks for optoelectronic applications because of their unique properties and atomically thin nature. The ability to stack them into van der Waals (vdWs) heterostructures with new functionality has opened a new platform for fundamental research and device a...