In this paper, electric field distribution of the junctionless dual material surrounding gate MOSFETs (JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction based devices, but junctionless has a positive flatband voltage with zero electric field. In Surrounding gate MOSFETs gate material surrounds the channel in all direction , therefore it can overcome t...

In the present work, Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been studied for its improved linearity performance on the basis of VIP3 (i.e. extrapolated input voltage at which the first and third order harmonic voltages are equal) and compared with the conventional Single Material Gate (SMG) AlGaN/GaN HEMT. The influence of the device parameters such as t...

To sustain transistor scaling beyond lateral 7 nm devices, gate-all-around (GAA) junctionless vertical nanowire field effect transistors (JLNT) are one of the promising alternatives. overcome roadblocks logic cell design using this emerging technology, work explores compact modeling 3D GAA-JLNTs based on physics transport. The model features an explicit continuous analytical form drain current ...

A comprehensive study of the drain current drift mechanism and hysteresis phenomena in fabricated p-channel junctionless ion-sensitive field-effect transistor (JL-ISFET) has been investigated for first time. The measurements have performed through transient analysis current, under different pH liquid-gate bias (Vlg). Further, time-dependent gate-capacitance (CG) also analyzed to see effect hydr...

This paper investigates the effect of gate electrode work function in 30 nm gate length conventional and junctionless FinFETs using technology computer-aided design (TCAD) simulations. DC parameters, threshold voltage (vt), drive current (Ion) and output resistance (Ro), and RF parameters, unity gain cutoff frequency (ft), non-quasi static (NQS) delay and input impedance (Z11) are investigated....

In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the...

The gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology nodes. In particular, the junctionless transistors are scalable with reduced variability avoidance of steep source/drain junction formation by ion implantation. Here dual-gated p-type field effect transistor demons...

full adder cell is often placed in the critical path of other circuits. therefore it plays an important role in determining the entire performance of digital system. moreover, portable electronic systems rely on battery and low-power design is another concern. in conclusion it is a vital task to design high-performance and low-power full adder cells. since delay opposes against power consumptio...