A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO(2) starting material), reactive low voltage ion plating, and dual ion beam sputtering. The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one...

Topography of silicon surfaces irradiated by a 2 MeV Si + ion beam at normal incidence and ion fluences in the range 10 15 − 10 16 ions/cm 2 has been investigated using scanning tunneling microscopy. At length scales below ∼ 50 nm, surface smoothing is observed; the smoothing is more prominent at smaller length scales. The smoothed surface is self-affine with a scaling exponent α = 0.53 ± 0.02....

Focused ion beams are an essential tool for cross-sectional material analysis at the microscale, preparing TEM samples, and much more. New plasma sources allow higher beam currents options to use unconventional species, resulting in increased versatility over a broader range of substrate materials. In this paper, we present results four-material study from five different species varying energie...

Energetic ions present in the diverse plasma conditions in space play a significant role in the formation and modification of solid phases found in environments ranging from the interstellar medium (ISM) to the surfaces of airless bodies such as asteroids and the Moon. These effects are often referred to as space radiation processing, a term that encompasses changes induced in natural space-exp...

Silicon nanowires of various diameters were irradiated with 100 keV and 300 keV Ar(+) ions on a rotatable and heatable stage. Irradiation at elevated temperatures above 300 °C retains the geometry of the nanostructure and sputtering can be gauged accurately. The diameter dependence of the sputtering shows a maximum if the ion range matches the nanowire diameter, which is in good agreement with ...

As extensive experimental studies have shown, under certain conditions, ion bombardment of solid targets induces a random (self-affine) morphology on the ion-eroded surfaces. The rough morphology development is known to cause substantial variations in the sputtering yields. In this article, we present a theoretical model describing the sputter yields from random, self-affine surfaces subject to...

Instrumentation To overcome current difficulty of absolute period control in the EUV multilayer fabrication by sputtering, we have developed an automatic null ellipsometer as a sputtering rate monitor having high enough picometer thickness sensitivity enabling accurate monitoring of the nm period multilayer fabrication [1]. Figure 1 shows schematic drawing of the ellipsometer installed as the s...

The crystal structure and magnetic properties of Fe/AI multilayered films prepared using the ion beam sputtering method have been investigated. The crystallite orientation and magnetism of Fe layers were found to depend significantly on A1 layer thickness. This resutt may be caused by the crystallographic interaction between Fe and A1 layers.

Co/Ni multilayers display perpendicular magnetic anisotropy and have applications in magnetic devices that could lead to a large increase in the density of magnetic storage. Co/Ni 10-(2 A Co/ 8A Ni) and 10-(2 A Co/ 4A Ni) multilayers were deposited with ion beam sputtering on either ion beam sputtered copper or direct current magnetron sputtered gold buffer layers of various thicknesses. The ef...