Interfacial topological states are a key element of interest for topological insulator thin films, and their properties can depend sensitively on the atomic bonding configuration. We employ in situ nonresonant and resonant surface x-ray scattering to study the interfacial and internal structure of a prototypical topological film system: Bi2Te3 grown on Si(111). The results reveal a Te-dominated...

Average stress during shear bond testing, and deformation behaviour during nano-indentation testing were calculated for the bonding area as a bonding site for copolymerization with resin composite in dentine bonding systems. First average stress was calculated in the bonding area between bovine dentine and composite resin. Secondly, the plastic deformation zone size was calculated using an elas...

The recent development in the structure-function relationship of pancreatic phospholipase A(2) is reviewed. The results of extensive studies by a combination of site-directed mutagenesis, X-ray crystallography, and NMR have provided new insight into several old issues. In particular, we summarize current views on the active site, the interfacial binding site, the mechanism of interfacial activa...

Air-aqueous sodium halide solution interfaces are examined using vibrational sum frequency generation spectroscopy. Raman and ATR-FTIR (attenuated total reflection Fourier transform infrared) spectroscopies are also used to compare the effects of halide anions on the water structure of the bulk solution to that of the interface. The interfacial water structures for the sodium fluoride and chlor...

The paper presents a discussion of the various types of ceramic joining within a conceptual framework based on the fundamentals of wetting, adhesion, and the thermodynamics of interfacial reactions. Examples are given of solid state diffusion bonding of Pt to alumina and brazing of AlN. Most ceramic-metal bonding is conducted at high temperatures, where chemical reaction is to be expected. The ...

Al wire bonding, also called ultrasonic wedge-wedge bonding, is a microwelding process used extensively in the microelectronics industry for interconnections to integrated circuits. The bonding wire used is a 25 m diameter AlSi1 wire. A friction power model is used to derive the ultrasonic friction power during Al wire bonding. Auxiliary measurements include the current delivered to the ultraso...