To understand the essence of the exciton Mott transition in three-dimensional electron-hole systems, the metalinsulator transition is studied for a two-band Hubbard model in infinite dimensions with interactions of electronelectron (hole-hole) repulsion U and electron-hole attraction −U . By using the dynamical mean-field theory, the phase diagram in the U -U ′ plane is obtained (which is exact...

In this article, a novel concept is introduced to improve the radio frequency (RF) linearity of partially-depleted (PD) silicon-on-insulator (SOI) MOSFET circuits. The transition due to the non-zero body resistance (RBody) in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free c...

Filling-control metal-insulator transition on the two-dimensional Hubbard model is investigated by using the correlator projection method, which takes into account momentum dependence of the free energy beyond the dynamical mean-field theory. The phase diagram of metals and Mott insulators is analyzed. Lifshitz transitions occur simultaneously with metal-insulator transitions at large Coulomb r...

We consider a one-dimensional system of electrons interacting via a short-range repulsion and coupled to phonons close to the metal-insulator transition at half filling. We argue that the metal-insulator transition can be described as a standard one dimensional incommensurate to commensurate transition, even if the electronic system is coupled to the lattice distortion. By making use of known r...

We study the zero-temperature superfluid-insulator transition for a two-dimensional model of interacting, lattice bosons in the presence of quenched disorder and particle-hole symmetry. We follow the approach of a recent series of papers by Altman, Kafri, Polkovnikov, and Refael, in which the strong disorder renormalization group is used to study disordered bosons in one dimension. Adapting thi...

We study the zero temperature superfluid-insulator transition for a two-dimensional model of interacting, lattice bosons in the presence of quenched disorder and particle-hole symmetry. We follow the approach of a recent series of papers by Altman, Kafri, Polkovnikov, and Refael, in which the strong disorder renormalization group is used to study disordered bosons in one dimension. Adapting thi...

We show that the main mechanism for the dc voltage or dc current induced insulator-metal transition in vanadium dioxide VO(2) is due to local Joule heating and not a purely electronic effect. This "tour de force" experiment was accomplished by using the fluorescence spectra of rare-earth doped micron sized particles as local temperature sensors. As the insulator-metal transition is induced by a...

In high-temperature cuprate superconductors, it is now generally agreed that superconductivity is realized by doping an antiferromagnetic Mott (charge transfer) insulator. The doping-induced insulator-to-superconductor transition has been widely observed in cuprates, which provides important information for understanding the superconductivity mechanism. In the iron-based superconductors, howeve...