-Digital interference microscopy is a new measuring technique with submicron horizontal resolution and nanometric vertical resolution, that can be used for the three-dimensional analysis of surface defects and device features in many microelectronics applications on bulk materials and epitaxial layers. In this paper we show how certain defects can be analysed on III-V materials and devices usin...

BACKGROUND When evaluating the toxicity of engineered nanomaterials (ENMS) it is important to use multiple bioassays based on different mechanisms of action. In this regard we evaluated the use of gene expression and common cytotoxicity measurements using as test materials, two selected nanoparticles with known differences in toxicity, 5 nm mercaptoundecanoic acid (MUA)-capped InP and CdSe quan...

In this article, we suggested a novel design of polarization splitter based on coupler waveguide on InP substrate at 1.55mm wavelength. Photonic crystal structure is consisted of two dimensional (2D) air holes embedded in InP/InGaAsP material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. The photonic band gap (PBG) of this structure is determined using t...

The full-scale progression of optical communications was triggered by the indication in 1966 of the possibility of using low-loss optical fibers for communications. Since then, optical communication technologies have advanced by the development of optical semiconductors such as the laser diode (LD) and photodiode (PD), along with highspeed semiconductor circuit technologies, including the laser...

Radial core/shell nanowires (NWs) represent an important class of one-dimensional (1D) systems with substantial potential for exploring fundamental materials electronic and photonic properties. Here, we report the rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers. Transmission electron microscopy studies revealed sing...

Introduction: Millimetre-wave fibre wireless applications [1] could profit from a small antenna that can be fully integrated with the microwave and optical components of the system. This can lead to smaller and more cost-effective fibre-fed antenna units. Active integrated antennas [2] are another application that could benefit from a directly integrated antenna. Printed antennas are the obviou...

Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. ...

We report measurements of Kerr nonlinearity and group velocity dispersion in In0.53Ga0.47As/InP GaAs0.51Sb0.49/InP ridge waveguides the mid-infrared using four-wave mixing at λ ≈ 5 µm. Measured values are significantly higher compared to those reported for any other materials systems suitable building dielectric with low losses (λ 3–15 μm). Our establish both as promising platforms development ...

This paper describes integration of an advanced composite high-K gate stack (4nm TaSiOx-2nm InP) in the In0.7Ga0.3As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (tOXE) and low gate leakage (JG) and (ii) effective carrier confinement and high effective carrier velocity (Veff) in the QW channel...