Graphene (Gr) is of great interest in the development new electronic, photonic, and composite materials. The physical properties Gr can vary depending on number layers, this unique property makes it a potential material for different electronic applications. In study, few-layer graphene (FLG) film was spin-coated onto InP semiconductor surface FLG/n-InP Schottky contact produced. quality FLG na...

The depth profiles measured by secondary-ion mass spectrometry of 56 MeV oxygen ions implanted into Si, GaAs, and InP are reported. Most of the oxygen is contained within a sharp (full wi.dth at half maximum -211m) non-Gaussian profile centered at Jlm in GaAs, 36 }lm in InP, and 46 {-lm in Si, with the distribution skewed towards greater depths. The experimental projected ranges appear to be 10...

To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approa...

In this article, we suggested a novel design of polarization splitter based on coupler waveguide on InP substrate at 1.55m wavelength. Photonic crystal structure is consisted of two dimensional (2D) air holes embedded in InP/InGaAsP material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. The photonic band gap (PBG) of this structure is determined using t...

The integration of optical functionalities on a chip has been a long standing goal in the optical community. Given the call for more integration, Silicon-on-Insulator (SOI) is a material system of great interest. Although mature CMOS technology can be used for the fabrication of passive optical functionality, particular photonic functions like efficient light emission still require III-V semico...

Long wavelength InP-based p-i-n photodetectors (PD) are ubiquitous in modern optoelectronic circuits due to their inherent combination of ultra-high speed, high sensitivity in the most popular for modern telecom systems spectral range of 1.3-1.6 μm, and low bias voltages features that are impossible in principle for Si, GaAs or Ge counterparts. Typical material systems for the telecom spectral ...

We have grown by organometallic vapor phase epitaxy high-purity InP on Si substrates using a GaAs intermediate layer. The InP layers exhibit residual electron concentration as low as 5XIO14 cmT3 and electron mobilities as high as 4000 and 25 000 cm’!/V s at 300 and 77 K, respectively. The achieved InP quality is dependent on the GaAs intermediate layer thickness. These excellent electrical prop...

We report a low-temperature wafer bonding method for the realization of integration of GaAsand InP-based optoelectronic devices with Si microelectronic devices. This method uses a Au-Ge eutectic alloy as the bonding material sandwiched between GaAs and Si wafers, and between InP and Si wafers. The bonding process was carried out at 280-300 “C by taking advantage of the low-temperature solid-sta...

Concentration profiles of nitrogen in vacuumannealed pand n-type single-crystal (1 0 0) InP implanted with 1]101630 keV 15N` ions cm~2 have been studied by Secondary Ion Mass Spectrometry (SIMS) and Nuclear Resonance Broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford Backscattering Spectrometry (RBS) and channeling. Annealing the samples led to lo...

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measu...