InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier ...

High electron mobility transistor (HEMT) structures of AlInGaN/AlN/InGaN/GaN were grown by metal-organic chemical vapor deposition. A combination of low growth rate and high growth temperature during synthesis of the InGaN channel layer led to significant improvement in HEMT electron transport properties. The improvement was correlated with an evolution of both surface roughness and photolumine...

The authors have developed a wet, band-gap-selective, photoelectrochemical etching process capable of producing cantilever microelectromechanical systems from InGaN/GaN heterostructures. Fabricated cantilevers were successfully actuated, and resonance spectra were measured. The as-grown strain gradient in the GaN film was found to relax upon removal, resulting in upward curvature of the cantile...

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaN/InGaN heterojunctions. Room temperature photoluminescence of multiple InGaN quantum wells with GaN barriers fabricated by electron-cyclotron resonance assisted molecular beam epitaxy was measured as a function of position on a facet perpendicular to the layer structure. Our high r...

Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic chemical vapor deposition. 2D–3D growth mode transition through Stranski–Krastanov mode was observed via atomic force microscopy. The critical thickness for In0.67Ga0.33N QDs was determined to be four monolayers. The effects of growth temperature, deposition thickness, and V/III ratio on QD formation were examin...

ELECT A compositionally step-graded (CSG) InGaN barrier is designed for the active region of c-plane blue light-emitting diodes (LEDs). High external quantum efficiencies of 45, 42, 39 and 36% are achieved at current densities of 100, 200, 300 and 400 A/cm, respectively. Compared with GaN barrier devices, LEDs with CSG InGaN barriers showed higher power, lower operating voltage and smaller wave...

The impact of doping concentration and thickness n-InGaN p-InGaN regions on the power conversion efficiency single junction-based InGaN solar cells was studied by Silvaco ATLAS simulation software. 5 × 1019 cm−3 1 1015 were optimized for regions, respectively. 300 nm both regions. highest 22.17% with Jsc = 37.68 mA/cm2, Voc 0.729 V, FF 80.61% achieved at values cells. study shows relevance tool...

Highly efficient light-emitting diodes (LEDs) emitting ultraviolet (UV), blue, green, amber and red light have been obtained through the use of InGaN active layers instead of GaN active layers. Red LEDs with an emission wavelength of 675 nm, whose emission energy was almost equal to the band-gap energy of InN, were fabricated. The dependence of the emission wavelength of the red LED on the curr...

We demonstrated the fabrication of a peculiar GaN/InGaN-based high-density nanocrystal array on a nitrogen polarity GaN layer using a simple self-assembly process for the first time. The nanocrystals consist of bending InGaN nanoplates and supporting GaN nanocolumns. The nanocrystals are umbrella shaped with diameters of ∼200–700 nm; therefore, they are referred to as InGaN nanoumbrellas. Trans...

The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The three dimensional finite difference tim...