In this paper high resolution transmission electron microscopy analysis is performed on indium gallium zinc oxide thin film transistors to determine the crystal structure of the material. The relative elemental concentrations of indium, gallium, zinc and oxygen were quantified and analyzed using energy dispersive spectroscopy before and after subjection to positive gate bias temperature stress ...

A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states distribution as well as the presence of trap states in an organic material. The consequences resulting from the model are exemplarily discussed on the basis of ...

indium tin oxide (ito) thin films were deposited on glass substrates by rf sputtering using an ito ceramic target (in2o3-sno2, 90-10 wt. %). after deposition, samples were annealed at different temperatures in vacuum furnace. the post vacuum annealing effects on the structural, optical and electrical properties of ito films were investigated. polycrystalline ito films have been analyzed in wide...

A method for the synthesis of high quality indium-doped zinc oxide (In-doped ZnO) nanocrystals was developed using a one-step ester elimination reaction based on alcoholysis of metal carboxylate salts. The resulting nearly monodisperse nanocrystals are well-crystallized with typically crystal structure identical to that of wurtzite type of ZnO. Structural, optical, and elemental analyses on the...

optical modeling was applied for obtaining absorbance spectra and band gap values for different morphology of zno semiconductor. in optical modeling, the relative permittivity scalars of zinc oxide coral like nanorods were calculated using the bruggeman homogenization formalism. zno nano rods (zonrs) as a nucleus layer were fabricated on the indium tin oxide (ito) by chronoamperometry (ca) in a...

Platinum and palladium doped indium oxide sensors have been successfully fabricated by a screen printing method and tested as oxygen sensors at low temperature (150–400 °C) in a humid environment (~80–85% RH). The sensors, complying with a power law relationship, showed good differentiation at lower temperatures with highest response observed at 200 °C. Platinum had sensitivity of 2.2% per %O2 ...

Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, expo...

Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type ca...

The front transparent conductive oxide layer is a source of significant optical and electrical losses in silicon heterojunction solar cells because of the trade-off between free-carrier absorption and sheet resistance. We demonstrate that hydrogen-doped indium oxide (IO:H), which has an electron mobility of over 100 cm/V s, reduces these losses compared to traditional, low-mobility transparent ...

The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10-3 Ω·cm and high optical transmittance, in the visible range, of 50%-70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growt...