Herein, high-quality III2VI3 (III = Ga, In and VI S, Se) single crystals are successfully grown by a chemical vapor transport method. X-ray diffraction Raman spectroscopy verify crystal structure, crystalline state, vibration modes of the as-grown crystals. According to structure characterization, Ga2S3 is crystallized in monoclinic whereas Ga2Se3 belongs cubic zincblende phase. The In2S3 tetra...

Indium sulfide (In2S3) is an n-type semiconductor with wide bandgap energy (2.2–2.7 eV) and currently used as buffer/window layer in thin film solar cells alternative to toxic CdS. In the present study, In2S3 films were deposited on soda lime glass substrates using thermal evaporation technique at different substrate temperatures, Ts = 200 °C–350 °C. Further, all as-deposited annealed sulfur am...

Spray pyrolysis was used to deposit indium sulfide (In2S3) films, with or without silver doping. The films are polycrystalline, and the inclusion of Ag in In2S3 structure leads formation a solid solution, crystallite size order tens nanometers. exhibit semiconductive behavior, incorporation an increase charge carrier concentration, enhancing electrical conductivity films. small polaron hopping ...

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A novel dynamic soft template solution route has been developed for the preparation of micrometre-sized In2S3 half-shells, assembled by fine nanoparticles. This novel half-shell nanostructure was characterized by electron microscopes, x-ray diffraction (XRD), x-ray photoelectron (XPS), and optical spectroscopes. The catalytic property in the electro-oxidation of the nitric oxide (NO) of the hal...

Inorganic CdTe and FeSi2-based solar cells have recently drawn a lot of attention because they offer superior thermal stability good optoelectronic properties compared to conventional cells. In this work, unique alternative technique is presented by using FeSi2 as secondary absorber layer In2S3 the window for improving photovoltaic (PV) performance parameters. Simulating on SCAPS-1D, proposed d...

In the original article, XPS results shown in Figure 4 contain some errors resulting from an issue with instrument used to record data. The data were remeasured and corrected are replacement presented below. Several affected sentences (page 440, left column, second paragraph) reporting require correction have been reproduced below text indicated bold. … As 4a, spectrum of In2S3/TiO2 3d region s...