High-resolution x-ray photoemission spectroscopy, infrared reflectivity and Hall effect measurements, combined with surface space-charge calculations, are used to show that electron accumulation occurs at the surface of undoped single-crystalline In2O3. From a combination of measurements performed on undoped and heavily Sn-doped samples, the charge neutrality level is shown to lie approximately...

To know the electrical properties of any materials is very important for practical application of that material. In this paper I have tried to find out the proper electrical properties of Indium doped Alumina (Al2O3) for practical application of this Alumina. For this purpose all thin films are deposited on glass substrate by electron beam evaporation technique at a pressure of about 1.5 x 10-6...

In this paper, indium (In) films were deposited on glass substrates using DC sputtering method. Multiwalled carbon nanotubes (MWCNTs) and dispersant were dissolved in alcohol, and the mixed solution was deposited on the In films using the spray method. The bi-layer MWCNTs-In2O3 films were annealed at different temperatures (from room temperature to 500°C) in O2 atmosphere. The influences of ann...

Ozone, a strong oxidizing gas, has dramatically increased its concentration in the troposphere during the last decades. Since high O3 concentrations are hazardous to human health, the development of effective methods and economic devices to detect this gas is an urgent need. In this frame, In2O3 is well known as an n-type ozone sensitive and selective material, generally displaying its optimal ...

Two closely related mononuclear homoleptic indium-tris-guanidinate complexes have been synthesized and characterized as precursors for atomic layer deposition (ALD) of In2O3. In a water assisted ALD process, high quality In2O3 thin films have been fabricated for the first time using the new class of precursors as revealed by the promising ALD growth characteristics and film properties.

In this paper, the thermoelectric properties of In2O3-based materials in comparison with other thermoelectric materials are considered. It is shown that nanostructured In2O3 Sn-based oxides are promising for thermoelectric applications at moderate temperatures. Due to the nanostructure, specific surface properties of In2O3 and filtering effects, it is possible to significantly reduce the therma...

Semiconductor nanowires (NWs) are useful building blocks in optoelectronic, sensing, and energy devices and one-dimensional NWs have been used in photoelectrochemical (PEC) water splitting because of the enhanced light absorption and charge transport. It has been theoretically predicted that the {001} facets of body center cubic (bcc) In2O3 nanocrystals can effectively accumulate photogenerated...

Field effect transistors (FETs), incorporating metal-oxide nanofibers as the active conductive channel, have the potential for driving the widespread application of nanowire or nanofiber FETs-based electronics. Here we report on low voltage FETs with integrated electrospun In2O3-ZnO-ZnGa2O4 composite fiber channel layers and high-K dielectric (MgO)0.3-(Bi1.5Zn1.0Nb1.5O7)0.7 gate insulator and c...

In2O3 exhibits a dramatic increase in solubility of SnO2 and ZnO when they are cosubstituted into In2O3. The resultant material, In2-2xSnxZnxO3-δ with x ) 0-0.4, displays the same order of magnitude conductivity and transparency compared with bulk ITO (tindoped indium oxide). Rapid quenching of In2-2xSnxZnxO3-δ raises the conductivity and widens the optical bandgap while lowering the optical tr...

Carbon nanotube-In2O3 nanocomposites were synthesized by sol-gel method with the help of ultrasonic radiation. The samples were characterized by X-ray diffractometer, transmission electron microscopy and energy dispersive spectrometer. The UV absorbing properties were detected by the UV spectrophotometer. Photo degradation of methylene blue in aqueous solution was investigated by using CNT/In2O...