We report a tunable magnetoresistance (MR) behavior in suspended graphitic multilayers through point-defect engineering by ion implantation. We find that ion implantation drastically changes the MR behavior: the linear positive MR in pure graphitic multilayers transforms into a negative MR after introducing significant shortrange disorders (implanted boron or carbon atoms), consistent with rece...

We herein introduce an analytical model of hydrogen inventory saturation in the subsurface materials (several micrometers depth) under plasma implantation. This is valid for which desorption process not limited by recombination at surface. It based on a simplified assumption implantation both ions and atoms (point sources) stationary approach. The provides approximation density profile mobile/i...

Abstract In this work, we study ultra-low energy implantation into MoS 2 monolayers to evaluate the potential of technique in two-dimensional materials technology. We use 80 Se + ions at 20 eV and with fluences up 5.0·10 14 cm −2 . Raman spectra implanted films show that are predominantly incorporated sulfur sites 2−2 x alloys formed, indicating high ion retention rates, agreement predictions m...

Radiation enhanced diffusion at the surface of metals has been observed and studied for low-energy nitrogen ions at the surface of copper. The displacement of the target atoms during irradiation creates vacancies and other defects near the surface, thus enhancing the diffusion of implanted materials toward the surface and also into the solid. The mechanism has been studied here by a specia...

The composition, structure, and physicochemical properties of the surface near-surface layers silicon doped with low-energy (E 0 <5 keV) Ba + O 2 ions have been studied using a set photoelectron secondary electron spectroscopy methods. It has established that in process ion implantation, chemical bonds are formed between atoms alloying element matrix, width energy bands density electronic st...

mass separation ISOL-principle ial. Then these isotopes can be either diffused or implanted into the material under study. The most versatile procedure is ion implantation: Depending on the implantation energy, the concentration of dopants, their lateral and their depth distribution can be controlled easily. Any unwanted co-doping by other elements is only determined by the purity of the ion be...

Magnetostriction curves with (111) textured polycrystalline Co/Pd multilayers, as deposited or submitted to ArS ion implantation or thermal annealing, are presented and discussed. Both treatments, while promoting intermixing among CO and Pd atoms, induce an increase in the saturation magnetostriction values. The evolution of the engineering curves, however, are different due to different struct...

4H-SiC wafers with 12 um epilayer were implanted at the Tandem Van de Graaff facility Brookhaven National Laboratory tunable energy from 13 MeV up to 66 MeV. Lattice strains introduced by implantation process characterized in detail synchrotron rocking curve X-ray topography (SXRCT) and reciprocal space maps (RSMs). It is observed that strain levels correlate atomic mass of acceleration dopant ...

The characteristics of existing temperature sensors based on silicon monocrystals are analyzed, and the reasons for limited upper limit measurement established. To increase sensitivity, expand range measured temperatures, obtain a linear output characteristic sensor, authors propose to carry out phased implantation P + B ions with decreasing energy in different directions Si(111) crystal follow...

Abstract We report a systematic study that quantifies nitrogen retention and ammonia production on tungsten sheds light the mechanism for formation ITER’s divertor material. Saturation of nitrogen-implanted layer in polycrystalline is observed at room temperature ion fluence low 10 21 N + m −2 range. Nitrogen desorption from this N-implanted occurs 800–1100 K range exhibits zero-order kinetics ...