AIM Photonics has developed a high precision laser attach process using an ultra-precise ASM Amicra NANO 300 mm die-to-wafer flip-chip bonder and integrated solder stamping system. Laser die are placed with accuracy (<1 µm) soldered to form AuSn eutectic bond. This photonic platform low optical losses, SiN waveguides measuring on the order of 0.4 dB/cm calculated laser-to-waveguide coupling ...

Abstract More than 95% of 300 mm diameter single-crystal silicon ingots, the raw material for semiconductors, are produced by Czochralski process. The demand improving yield, throughput, and control performance has been increasing. present study developed a gray-box model that can predict controlled variables from manipulated with higher accuracy conventional first-principle (Zheng et al., 2018...

                In order to determine the best developmental stage of three common bean cultivars (Talash, COS16 and Khomain) at which maximum seed quality is attained under different irrigation regimes (I1-irrigation after 60 mm, I2-irrigation after 80 mm and I3-irrigation after 100 mm evaporation from class A pan), a split plot experiment (using R.C.B. design) with 3 replications was conducte...

Present study was carried out at the research farm of ICAR-Central Tuber Crops Research Institute, Thiruvananthapuram, Kerala during 3 summer seasons 2016–17, 2017–18 and 2018–19 to assess crop water requirement upland taro (Colocasia esculenta L. Schott) arrive a suitable irrigation schedule under humid tropical conditions Kerala. The experiment conducted in randomized block design (RBD), with...

We report for the first time direct growth of quantum dot (QD) lasers with electrical pumping on 300 mm Si wafers both a planar template and in-pocket in-plane photonic integration. O-band five QD layers were grown molecular beam epitaxy (MBE) in reactor then fabricated into standard Fabry–Perot ridge waveguide cavities. Edge-emitting are demonstrated high yield reliable results ready commercia...

We report on the development and characterization of superconducting damascene tantalum nitride (TaN) nanowires, 100 nm to 3 μm wide, with TaN thicknesses varying from 5 35 nm, using 193 optical lithography chemical mechanical planarization among other 300 mm wafer-scale processes. The film composition chosen for nanowire fabrication was informed by a detailed study unpatterned films nitrogen r...