A wide-bandwidth automatic gain control (AGC) amplifier IC was developed using a self-aligned selective-epitaxial SiGe heterojunction bipolar transistor (HBT). A transimpedance load circuit was used, and its damping factor was optimized to achieve a wide bandwidth of 32.7 GHz. Capacitor peaking was introduced to the second variable-gain amplifier in order to obtain a wide gain dynamic range of ...

Abstract We present a selective laterally wet etched collector InP/InGaAs/InGaAsP double heterojunction bipolar transistor (DHBT) with a quaternary step graded base collector structure. This device shows a DC current gain of = 70 over a large collector current range, a breakdown voltage of BVCE0 = 10.5 V, and a maximal collector emitter voltage of more than 5.5 V at 105 A/cm2 collector current ...

Silicon-on-insulator technology offers solutions to the higher-performance and lower-power dilemma Digital Systems: New two-antenna handset technology improves CDMA network performance Tx/Rx: Making phase shifters affordable for widespread commercial electronically scanned antenna arrays Mixed Signal: High-speed digital and mixed-signal ICs using advanced indium phosphide heterojunction bipolar...

This paper presents a core chip design in SiGe Heterojunction Bipolar Transistor base for X-band phased array Transmit/Receive (T/R) module. Usually phase shifters for X-band application were done by using of GaAs technique. Some commercial GaAs products for this type of integrate circuits are considered. The structure of the Core Chip for Phased Array T/R Modules is presented. Methods for the ...