116802-1 We present a phase diagram for a double quantum well bilayer electron gas in the quantum Hall regime at a total filling factor 1, based on exact numerical calculations of the topological Chern number matrix and the (interlayer) superfluid density. We find three phases: a quantized Hall state with pseudospin superfluidity, a quantized Hall state with pseudospin ‘‘gauge-glass’’ order, an...

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs, and AlAs is large [approximately 100(planck/e)(Omega cm)(-1)], showing the possibility of a spin Hall effect beyond the four-band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, i...

Effect of a shallow nitrogen implantation in the channel region of n-channel 4H-SiC Hall bar MOSFETs on their electrical properties has been characterized by Hall effect. A significant improvement of Hall mobility in normally-off devices is observed with increasing nitrogen implantation dose up to 10 13 cm -2 with a peak Hall mobility of 42.4 cm 2 .V -1 .s -1 . Coulomb scattering as dominant sc...

Based upon Raman spin-lattice interaction, we propose a theoretical model for the phonon Hall effect in paramagnetic dielectrics, which was discovered recently in an experiment [C. Strohm, G. L. J. A. Rikken, and P. Wyder, Phys. Rev. Lett. 95, 155901 (2005).]. The phonon Hall effect is revealed to be a phonon analogue to the anomalous Hall effect in electron systems. The thermal Hall conductivi...

Many ac quantized Hall resistance experiments have measured significant values of ac longitudinal resistances under temperature and magnetic field conditions in which the dc longitudinal resistance values were negligible. We investigate the effect of non-vanishing ac longitudinal resistances on measurements of the quantized Hall resistances by analyzing equivalent circuits of quantized Hall eff...

For the characterization of n-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the interdependence with mobility components via the re...

The calculated electron Hall Mobility and Hall scattering factor in n-type 6H-SiC based on numerical solutions to the Boltzmann transport equation are presented. These results were obtained by solving the Boltzmann equation exactly for the electron Hall mobility using the contraction mapping principle and the electron drift mobility with Rode’s iterative method. The relative importance of the v...