The use of pyrene–maleimide as an optimal surface ligand for GFET biosensor applications is proposed. With immersion time 2 h, cardiac troponin I (cTnI) could be sensed down to 22 ± 1 pg mL ?1 .

In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation velocity. However, its main disadvantage, the lack of bandgap, has not been satisfactorily solve...

The rapid worldwide spread of the severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) has created a series problems. Detection platforms based on graphene field-effect transistors (GFETs) have been proposed to achieve diagnosis SARS-CoV-2 antigen or antibody. For GFET-based biosensors, surface usually needs be functionalized immobilize bioreceptor and non-covalent approach is preferred...

We analyze the response of lateral n + -i-n-n graphene field-effect transistors (GFETs) to terahertz (THz) radiation. The nonlinearity due Coulomb drag quasi-equilibrium carriers by injected ballistic accompanied plasmonic oscillations in a GFET channel enables resonantly strong response. This effect can be used for effective resonant detection THz

Graphene field-effect transistors (gFETs) are gaining popularity for the realization of biological sensors as their graphene active area provides a convenient basis attaching organic substances, such appropriately engineered receptors. The presence particular agent then translates in modification electrical characteristics gFET. We thus developed compact, portable system that is able to accurat...

In recent years, breakthroughs in electronics technology have resulted upgrades the physical properties of metal oxide semiconductor field effect transistor (MOSFET) toward smaller sizes and improvements both quality performance. Hence, growth (GFET) is being promoted as one worthy contenders due to its superior material characteristics. A 14 nm horizontal double-gate bilayer graphene FET with ...

A so called all-carbon based graphene field effect transistor (GFET) in which the electrodes are composed of graphite-like nano-sheets instead of metals in the traditional devices is fabricated by one-step e-beam direct writing (EBDW). It is also found that the graphite-like nano-sheets in electrodes are perpendicular to the channel graphene, which is confirmed by the transmission electron micr...