When Ge is deposited epitaxially on Si, the strain energy from the lattice mismatch causes the Ge in layers thicker than about four monolayers to form distinctive, three-dimensional islands. The shape of the islands is determined by the energies of the surface facets, facet edges, and interfaces. When phosphorus is added during the deposition, the surface energy changes, modifying the island sh...

We report results from Hall effect studies on AlxGa1 xAs (x = 0.23–0.24) with bandgap energies of 1.76 ± 0.01 eV grown by liquid-phase epitaxy (LPE). Room-temperature Hall measurements on unintentionally doped AlGaAs revealed p-type background doping for concentrations in the range 3.7–5.2 9 10 cm . Sn, Te, Ge, and Zn-doped AlGaAs were also characterized to study the relationship between doping...

Precise depth profiling of the various elements present in Si/SiGe heterostructures is crucial in order to optimize the electrical properties of devices. The condensation technique allows the Ge enrichment of low Ge content SiGe layers by a selective oxidation of Si compared to Ge [1]. It can be used to obtain Ge nanowires for the elaboration of high performance devices [2]. Saracco et al. prop...

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InNJ(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the inter...

A straightforward enantiomerically pure synthesis of the heterocyclic core of the D-series GE2270 is reported. The synthetic strategy combines the Hantzsch thiazole's building condensation with a cross-coupling reaction including direct C-H hetarylation to build and connect step-by-step thiazolyl moieties to the 5-bromopicolinate as readily available starting material.

In this research, the effects of HCN adsorption on the surface of the pristine, Ge, P, and GeP doped boron nitride nanotube (BNNTs) are investigated by using density function theory at the B3LYP/6–31G(d, p) level of theory. At the first step, we consider different configurations for adsorbing HCN molecule on the surface of BNNTs. The optimized models are used to calculate the structural, electr...

Midinfrared photodetectors in the 3–5 mm region were demonstrated by using molecular beam epitaxy grown self-assembled Ge quantum dots at normal incidence. The structure was a p-i-p with p-type doped Ge dots embedded in the intrinsic layer sandwiched in the two heavily p-doped regions. The dark current density at 77 K is 6.4 mA/cm at 1 V. The as-grown sample has a response at normal incidence i...

In this work, we report about our recent results concerning the fabrication of Long Period Grating (LPG) sensors in several optical fibers, through the Electric Arc Discharge (EAD) technique. In particular, the following silica fibers with both different dopants and geometrical structures are considered: standard Ge-doped, photosensitive B/Ge codoped, P-doped, pure-silica core with F-doped clad...