Ultra low-voltage (ULV) floating-gate (FG) differential amplifiers are presented. In this paper we present several different approaches to CMOS ULV amplifier design. Sinh-shaped and tanh-shaped transconductance amplifiers are described. Measured results are provided. Keywords— Floating-gate, low-voltage, low-power, lowvoltage amplifiers, analog floating-gate circuits.

The charge/discharge phenomenon of capacitance between terminals in a power MOSFET affects on its switching behavior of the device. The input capacitance is composed of the gate-source capacitance CGS and the gate-drain capacitance CGD, which vary with gate voltage VGS. This paper characterizes the relationship between the input capacitance of a SiC MOSFET and the gate voltage with considering ...

The multiple-input floating gate transistors were used to simplify the design of multiple valued logic. The Quasi-floating gate node have a well defined DC operating point. The multi-input quasi-floating gate is used for low voltage applications because its effective threshold voltage will be controllered to a low value.

In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET’s with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) “atomistic” simulation technique described elsewhere [1]. MOSFET’s with uniform channel doping and with low doped epitaxial channe...

Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si1 x yGexCy gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si1 xGex gate...

In this paper we promote the Ultra Low Voltage (ULV) NAND gate to replace either partly or entirely the encryption block of a design to withstand power analysis attack. Keywords—Differential Power Analysis (DPA), Low Voltage (LV), Ultra Low Voltage (ULV), Floating-Gate (FG) and supply current analysis.

The Graphene based single electron transistor (SET) as a coulomb blockade device need to be explored .It is a unique device for high-speed operation in a nano scale regime. A single electron transfers via the coulomb barriers, but its movement may be prevented by coulomb blockade, so its effect is investigated in this research. The conditions of coulomb blockade and its controlling factors such...

Time-periodic perturbation can be used to modify the transport properties of the surface states of topological insulators, specifically their chiral tunneling property. Using the scattering matrix method, we study the tunneling transmission of the surface states of a topological insulator under the influence of a time-dependent potential and finite gate bias voltage. It is found that perfect tr...

Self-aligned four-terminal (4T) planar metal double-gate (DG) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature (LT), which is below 550◦C, to realize high performance and low power dissipation system-onglass (SoG). The top gate (TG) and bottom gate (BG) were formed from tungsten (W); the BG was embedded in the glass substra...