The narrowest feature of an integrated circuit is the silicon dioxide gate dielectric (3±5 nm). The viability of future CMOS technology is contingent upon thinning the oxide further to improve drive performance, while maintaining reliability. Practical limitations due to direct tunneling through the gate oxide may preclude the use of silicon dioxide as the gate dielectric for thicknesses less t...

A method for the formation of a low-temperature hybrid gate dielectric for high-performance, top-gate ZnO nanowire transistors is reported. The hybrid gate dielectric consists of a self-assembled monolayer (SAM) and an aluminum oxide layer. The thin aluminum oxide layer forms naturally and spontaneously when the aluminum gate electrode is deposited by thermal evaporation onto the SAM-covered Zn...

Article history: Received 23 November 2009 Received in revised form 21 January 2010 Available online 1 March 2010 0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.01.045 * Corresponding author. E-mail address: [email protected] (Y.-K. Fang In this work, influences of oxygen effect on an Hf-based high-k gate dielectric were investigated. A post deposition anneali...

In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for highK dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs....

Time-dependent dielectric breakdown (TDDB) characteristics of La2O3-doped high-k dielectric in Hf-based high-k/TaN metal gate stack were studied. Unlike the abrupt breakdown in the conventional SiO2, dielectric breakdown behaviors of La-incorporated HfON and HfSiON dielectrics show progressive breakdown characteristics. Moreover, the extracted Weibull slope β of breakdown distribution is in the...

Interfaces between silicon and oxides are of great fundamental and technological interest. According to the International Technology Roadmap for Semiconductors, the SiO2-based gate oxide in metal-oxide-semiconductor MOS transistors used in computer processors should be replaced by a higher-K value dielectric material starting in 2008.1 Presently, off-state gate tunneling is increasing power con...

Active modulation of ions and molecules via field-effect gating in nanofluidic channels is a crucial technology for various promising applications such as DNA sequencing, drug delivery, desalination, and energy conversion. Developing a rapid and facile fabrication method for ionic field-effect transistors (FET) over a large area may offer exciting opportunities for both fundamental research and...

1566-1199/$ see front matter 2010 Elsevier B.V doi:10.1016/j.orgel.2010.07.026 * Corresponding author at: Department of Elec Engineering, The Ohio State University, Columbus, +1 614 247 6235; fax: +1 614 292 7596. E-mail address: [email protected] (P.R. Berger). Here we report on low-supply voltage and high-performance regioregular poly-(3-hexythiophene) (P3HT) organic thin-film transistors (OTF...