The temperature stability of Ge/Au/Ni/Au ohmic contacts to GaAs nanoheterostructures and Ti/Al/Ni/Au GaN on silicon substrate was investigated. It has been established that optimization the RTA process made it possible obtain with field emission current flow mechanism. thermal for transistors mesa resistors demonstrated threshold behavior heat treatment temperature. optimum parameters minimum c...

This paper reviews our recent experimental work on erbium incorporated into gallium arsenide during MBE growth. The electrical behaviour of the erbium is considered in relation to its interaction with intentionally added dopants (silicon, selenium and berylium) and the effect of the erbium on the deep state population is discussed. At higher concentrations the morphology of phase separation is ...

Silver (Ag) nanowires with chemically clean surfaces have been directly grown on semi-insulating gallium arsenide (GaAs) wafers through a simple solution/solid interfacial reaction (SSIR) between the GaAs wafers themselves and aqueous solutions of silver nitrate (AgNO(3)) at room temperature. The success in synthesis of Ag nanowires mainly benefits from the low concentration of surface electron...

Gallium arsenide junction field-effect transistors (GaAs JFETs) can be made immune to carrier freeze-out, making such transistors useful for the readout of detector arrays that operate at 4 K. Typical applications require transistors with very low noise and extremely low leakage current. By using a recently developed etchant for GaAs that is highly isotropic, etched GaAs JFETs have fabricated t...

A terahertz (THz) antenna is proposed that offers high input resistance and gain in the presence of an electrically thick GaAs substrate. The antenna is centrally fed using two vertical probes connected to a photomixer on a thin low temperature grown gallium arsenide (LTG-GaAs) film which is supported by the GaAs substrate. An input impedance of ∼ 3.3 kΩ has been achieved using a dipole antenna...

Gallium arsenide (GaAs) has superior properties for making high-frequency devices and photon emitters. In the future, this is going to be ex tensively used in the development of super comput ers, telecommunication systems, light-emitting diodes, and semiconductor lasers. This will inevita bly lead to an increase in the exposure of workers manufacturing these products to GaAs. When GaAs was inst...

Since the original theoretical insights of Bardeen and Shockley about 40 years ago, the progress of solid-state electronics has been paced by the ability to control chemical bonding structures, particularly at surfaces and interfaces. The functioning of solid-state devices depends on being able to produce interfacial structures with a minimum number of defective chemical bonds. A series of chem...

The aim of this study was to assess the aptitude recurrent Long Short-Term Memory (LSTM) neural networks for fast and accurate predictions process dynamics in vertical-gradient-freeze growth gallium arsenide crystals (VGF-GaAs) using datasets generated by numerical transient simulations. Real time temperatures solid–liquid interface position GaAs are crucial control applications visualization, ...

We present a polarization-independent metamaterial design for the construction of electrically tunable terahertz (THz) devices. The implemented structure consists of an array of gold crosses fabricated on top of an n-doped gallium arsenide (GaAs) layer. Utilizing THz time-domain spectroscopy, we show that the electric resonance and thus the transmission properties of the cross structure can be ...

Wide bandgap semiconductors have expanded the scope of device applications beyond those of silicon and gallium arsenide. Exploitation of wide bandgap semiconductors holds promise for revolutionary improvements in the cost, size, weight and performance of a broad range of military and commercial microelectronic and opto-electronic systems. The inherent material properties of silicon carbide, gal...