A brief review of our recent research on preparation and characterization oxide nanoparticles their derivatives by hydrothermal growth is presented. series Ga2O3 , ZnO, TiO2 nanoparticles, as well derivative nanomaterials including GaN nanowires ZnO/TiO2 nanocompostes have been prepared. ZnO nanopowders produced using metal nitrate hydrates precursors, while Titanium isopropoxide was used for n...

Figure S1. Photoluminescence spectra of CdSe/CdS nanocrystals (NCs) in (a) nanocrystal conjugate, linked with thioglycolic acid (TGA), upon correction for the contribution from Ga2O3 NC emission, (b) pure CdSe/CdS nanocrystal suspension, and (c) mixture of Ga2O3 and CdSe/CdS NCs without the TGA linker. The concentrations of CdSe/CdS NCs are identical in all panels, and are expressed in (a) as a...

Several oxide-GaAs heterostructures were fabricated using in situ multiple-chamber molecular beam epitaxy. The oxides include SiO2, MgO, and Ga2O3~Gd2O3!, all evaporated by an electron beam method. The SiO2 and Ga2O3~Gd2O3! films are amorphous while the MgO films are crystalline and part of the films are epitaxially grown on GaAs~100!. Among these heterostructures, the Ga2O3~Gd2O3!–GaAs shows a...

Our measurements of surface enhanced Raman scattering (SERS) on Ga2O3 dielectric nanowires (NWs) core/silver composites indicate that the SERS enhancement is highly dependent on the polarization direction of the incident laser light. The polarization dependence of the SERS signal with respect to the direction of a single NW was studied by changing the incident light angle. Further investigation...

Our numerical modelling of the Czochralski growth of single crystalline β-Ga2O3 crystals (monoclinic symmetry) starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid flow analysis in the crystal-melt-crucible arrangement and targets the 3D thermal stress analysis within the β-Ga2O3 crystal. In order to perform the stress analysi...

Nanopatterned Pt by Ga+ focused ion beam (FIB) decomposition of an organometallic precursor forms low resistance ohmic contacts on 40–70 nm diameter GaN nanowires (NWs) grown by thermal reaction of Ga2O3 and NH3. With no intentional doping, the wires are presumed to be n-type. Thus, the linear I-V behavior is surprising since evaporated Pt usually forms Schottky barriers on n-GaN. Ohmic behavio...