The development of strategies for addressing arrays of nanoscale devices is central to the implementation of integrated nanosystems such as biological sensor arrays and nanocomputers. We report a general approach for addressing based on molecular-level modification of crossed semiconductor nanowire field-effect transistor (cNW-FET) arrays, where selective chemical modification of cross points i...

We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface lig...

We report on infrared (IR) spectromicroscopy of the electronic excitations in nanometer-thick accumulation layers in field-effect transistor (FET) devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectrosco...

We describe a transparent and flexible field-effect transistor (FET) made from graphene and single-walled carbon nanotubes (SWNT) hybrid system. Graphene and vertically aligned SWNTs simultaneously grown by alcohol catalytic chemical vapor deposition (ACCVD) were employed as channel and source-drain electrode, respectively. Gate electrode was also made of SWNTs separated with a thin poly(vinyl ...

We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor sDGSOId operated as a velocity modulation transistor sVMTd and as a conventional field effect transistor sFETd. Operated as a VMT, the DGSOI transistor provides switching times shorter than 1 ps regardless of the channel length, with a significant current modula...

Nanometric field-effect-transistor (FET) sensors are made on the tip of spear-shaped dual carbon nanoelectrodes derived from carbon deposition inside double-barrel nanopipettes. The easy fabrication route allows deposition of semiconductors or conducting polymers to comprise the transistor channel. A channel from electrodeposited poly pyrrole (PPy) exhibits high sensitivity toward pH changes. T...

In this paper, we extend our studies on the use of zero impact ionization and zero subthreshold swing field-effect-transistor (Z-FET) as a capacitor-less one-transistor dynamic random access memory (1TDRAM) through both experiment and TCAD simulation. The data retention time is measured as a function of biasing, temperature and device dimensions, leading to a simple predictive model. An alterna...

We demonstrate that the conductance of a field-effect transistor ~FET! gated by a layer of nanometer-sized quantum dots is sensitive to the absorption of single photons. Rather than relying upon an avalanche process, as in conventional semiconductor single-photon detectors, the gain in this device derives from the fact that the conductivity of the FET channel is very sensitive to the photoexcit...

The authors develop a theory of photodetection in double-gated bilayer graphene (BLG) field-effect transistor (FET), following the Dyakonov-Shur scheme based on nonlinear mixing plasma waves. A BLG channel displays peculiar effect: band gap depends intensity wave, which makes photoresponse dependent FET electrostatics. work here bridges microscopic features electronic dispersion two-dimensional...