An improved topology of a voltage-fed quasi-resonant soft switching LCrCdc series-parallel half bridge inverter with a constant-frequency for electronic ballast applications is proposed in this paper. This new topology introduces a low-cost solution to reduce switching losses and circuit rating to achieve high-efficiency ballast. Switching losses effect on ballast efficiency is discussed throug...

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostruc...

An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon layer and the buried oxide layer. The LDBL thickness is a...

An improved topology of a voltage-fed quasi-resonant soft switching LCrCdc series-parallel half bridge inverter with a constant-frequency for electronic ballast applications is proposed in this paper. This new topology introduces a low-cost solution to reduce switching losses and circuit rating to achieve high-efficiency ballast. Switching losses effect on ballast efficiency is discussed throug...

The article presents a comparison of different Direct Torque Control methods Stand-Alone Doubly Fed Induction DC-Voltage Generator, with classic field oriented control used as benchmark. system consists doubly fed induction generator the stator circuit which is connected to DC-bus diode rectifier, and rotor converter same DC bus. main problem this power generation are large torque oscillations ...

Introduction: Nowadays, the main focus of dental studies is on adhesive dental materials; since clinical long-term success of bonded restorations depended more on marginal microleakage minimization. So, the aim of this study was Evaluation of Diode laser irradiation effect on microleakage in class V composite restoration before and after adhesive application. Materials and methods: In this in v...

Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.4 eV. GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of ...

Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and ...

Research into organic field effect transistors (OFETs) has made significant advances—both scientifically and technologically—during the last decade, and the first products will soon enter the market. Printed electronic circuits using organic resistors, diodes and transistors may become cheap alternatives to silicon-based systems, especially in large-area applications. A key parameter for device...

The response of adult mosquitoes to 4 light-emitting diode (LED) wavelengths was evaluated using diode-equipped sticky cards (DESCs) and diode-equipped resting boxes at 2 sites in north central Florida. Wavelengths evaluated were blue (470 nm), green (502 nm), red (660 nm), and infrared (IR) (860 nm). When trapping with DESCs, 15 mosquito species from 7 genera (Aedes, Anopheles, Coquillettidia,...