We propose and investigate experimentally a tunable and stable fiber laser with single-longitudinal-mode (SLM) and power-equalized output based on a two-stage erbium amplifier and a saturable-absorber filter. Two-stage amplifier consists of an erbium-doped waveguide amplifier (EDWA) and erbium-doped fiber amplifier (EDFA) to generate a flatter amplified spontaneous emission (ASE) source for con...

On-chip optical interconnects with wavelength division multiplexing are being pursued as a low-power low-latency high-bandwidth alternative to metal interconnects. Significant research has focused on integrating optical gain material into the Si platform, with III-V wafer bonding to Si being the most successful candidate to date. In addition there is a long history of efforts to incorporate Er3...

Erbium-doped Y203 integrated optical amplifiers are designed for low-threshold operation and 3dB amplification. The most important design parameter for minimal threshold, the erbium concentration, is found to have an optimum value of 0.35 at% for a given waveguide structure with 1.0dBcm -1 background loss. The corresponding threshold power is 7 mW. The pump power to obtain 3dB gain is found to ...

Er–Si–O crystalline thin film preparation on silicon substrates by using metal organic molecular beam epitaxy (MOMBE) is proposed. Tetra ethoxy silane (TEOS) and tris-2,2,6,6-tetra methyl-3,5-octane dionato erbium (Er(TMOD)3) were used as Si–O and Er– O precursors, respectively. The Er–Si–O thin film crystallizes mainly during the post-annealing process and into a novel type of erbium-silicate ...

Applying an inversing method and a genetic algorithm, two radial distributions, i.e., a core graded-index and erbium-doped concentration, are optimized for an erbium-doped fiber amplifier (EDFA) in a two-level model under single-mode condition and weakly guided approximations. There is evidence to show that the core graded-index has obvious influence on the gain bandwidth of the EDFA, and simil...

We report on a novel optical thin film material, erbium-doped deuterated amorphous carbon, fabricated directly on silicon substrate at room-temperature via controlled thermal evaporation of a Metal-Organic compound in a Plasma-Enhanced Chemical Vapour Deposition (MO-PECVD) system. High erbium concentrations (up to 2.3 at.%) and room-temperature photoluminescence at 1.54 microm are successfully ...

We present a new method of measuring the guided, radiated, and total decay rates in uniform waveguides. It is also shown theoretically that large modifications of the total decay rate can be achieved in realistic erbium-doped fiber amplifiers and erbium-doped waveguide amplifiers with effective mode area radii smaller than approximately 1 microm.

Transparent mesoporous silica films were prepared by sol-gel spin coating on silicon wafers at room temperature. An erbium complex, erbium tris 8-hydroxyquinoline (ErQ), was homogeneously impregnated into the pores of the mesoporous silica films, and its concentration was easily controlled by using a solution immersing technique. The ErQ-impregnated mesoporous silica films show a room-temperatu...

The lifetime of Er3+ in silicon-rich silicon oxide has been reported with quite widely varying values ranging from 9 ms to 2 ms. In this work, we consider the direct impact of silicon nanoclusters on the erbium radiative lifetime, and show that it is a function of the silicon nanocluster size, and also the erbium proximity to the nanocluster.

The equiatomic rare earth compounds REPtZn (RE = Y, Pr, Nd, Gd–Tm) were synthesized from the elements in sealed tantalum tubes by high-frequency melting at 1500 K followed by annealing at 1120 K and quenching. The samples were characterized by powder X-ray diffraction. The structures of four crystals were refined from single-crystal diffractometer data: TiNiSi type, Pnma, a = 707.1(1), b = 430....