We propose a method to calculate the Greens function of a free massive scalar field on the lattice numerically to very high precision. For masses m < 2 (in lattice units) the massive Greens function can be expressed recursively in terms of the massless Greens function and just two additional mass-independent constants. PACS: 12.90.+b

We propose a method to calculate the Greens function of a free massive scalar field on the lattice numerically to very high precision. For masses m < 2 (in lattice units) the massive Greens function can be expressed recursively in terms of the massless Greens function and just two additional mass-independent constants. PACS: 12.90.+b

Recent studies of wide band-gap diamond field emission devices have realized superior performance and lifetime. However, theoretical studies using standard Fowler-Nordheim (FN) theory do not fully capture the physics of diamond semiconductor emitters as a result of the fitting parameters inherent to the FN approximation. The following research computationally models wide band-gap field emission...

This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer aided design) tool for quantum level device simulation, 3) examination and assessment of new features of ...

Abstract In semi-classical transport, it has become common practice over the past few decades to use ensemble Monte Carlo methods for simulation of transport in semiconductor devices. This method utilizes particles while still addressing full physics within device, leaving computational difficulties computer. More recently, study quantum mechanical effects devices, have important, and been addr...

Abstract We show quantum systems with disordered Hamiltonians may exhibit order in commonly measured quantities. This counter-intuitive situation is demonstrated using a conventional tight binding model for two-dimensional nanoribbons various boundary conditions. The analysis uses the traditional non-equilibrium Green's function (NEGF) methodology electron transport. study dragon nanodevices th...

A quantum transport model incorporating spin scattering processes is presented using the non-equilibrium Green's function (NEGF) formalism within the self-consistent Born approximation. This model offers a unified approach by capturing the spin-flip scattering and the quantum effects simultaneously. A numerical implementation of the model is illustrated for magnetic tunnel junction devices with...

Electron transport is computed in 3nm Si nanowires subject to incoherent scattering from phonons. The electronic structure of the nanowire is represented in an atomistic sp3d5s* tight binding basis. Phonon modes are computed in an atomistic valence force field rather than a continuum deformation potential. Atomistic transport and incoherent scattering are coupled through the non-equilibrium Gre...

Carrier transport in modern nanoelectronic devices involves physical scales which require quantum descriptions. Basic quantum mechanics describes systems determined by Hamiltonian state vectors |Ψ>, which provide the spatial and time dependences of the physical observables. A pure state density operator |Ψ><Ψ| as obtained by a single state vector contains the most complete information about the...

The electronic properties of antimonene, single-layer Sb, are attracting great attention. In this paper, spin transport in armchair antimonene nanoribbon (ASbNR) is investigated. Following the tight-binding model, we calculate both transmission probability and conductance by means non-equilibrium Green's function (NEGF) method. effects an external electric field vertical to ribbon plane explore...