Graphene, a monoatomic layer of graphite hosts a two-dimensional electron gas system with large electron mobilities which makes it a prospective candidate for future carbon nanodevices. Grown epitaxially on silicon carbide (SiC) wafers, large area graphene samples appear feasible and integration in existing device technology can be envisioned. This article reviews the controlled growth of epita...

Most of our knowledge of dislocation-mediated stress relaxation during epitaxial crystal growth comes from the study of inorganic heterostructures. Here we use Bragg coherent diffraction imaging to investigate a contrasting system, the epitaxial growth of calcite (CaCO3) crystals on organic self-assembled monolayers, where these are widely used as a model for biomineralization processes. The ca...

Amorphization and solid-phase epitaxial growth were studied in C-cluster ion-implanted Si. C7H7 ions were implanted at a C-equivalent energy of 10 keV to C doses of 0.1 9 10 cm 2 to 8.0 9 10 cm 2 into (001) Si wafers. Transmission electron microscopy revealed a C amorphizing dose of 5.0 9 10 cm . Annealing of amorphized specimens to effect solid-phase epitaxial growth resulted in defect-free gr...

Stanene, a two-dimensional topological insulator composed of Sn atoms in a hexagonal lattice, is a promising contender to Si in nanoelectronics. Currently it is still a significant challenge to achieve large-area, high-quality monolayer stanene. We explore the potential of Ag(111) surface as an ideal substrate for the epitaxial growth of monolayer stanene. Using first-principles calculations, w...

Molecular Beam Epitaxy is a method for growing atomically thin lms of material. During epitaxial growth, atoms are deposited on a surface, where they hop randomly until attaching at the edges of partially completed atomic monolayers. This process has practical application to the fabrication of high speed semiconductor electronic devices. We have formulated a new model for epitaxial growth, the ...

The solid-phase epitaxial growth kinetics of amorphized (011) Si with application of in-plane 2 11 1⁄2 uniaxial stress to magnitude of 0.9 0.1 GPa were studied. Tensile stresses did not appreciably change the growth velocity compared with the stress-free case, whereas compression tended to retard the growth velocity to approximately one-half the stress-free value. The results are explained usin...

In molecular beam epitaxy (MBE) of semiconductors the goal is to synthesize a highly ordered crystalline film layer by layer so that the arrangement of atoms is well defined. For example, one might want to construct superlattices which consist of alternate bands of GaAs and AlAs which are four atomic layers thick [ 1 ] or to dope boron into silicon in a highly controlled fashion. To obtain epit...

Nucleation and growth of wurtzite AlN layers on nominal and off-axis Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy is reported. The nucleation and the growth dynamics have been studied in situ by reflection high-energy electron diffraction. For the films grown on the nominal Si(0 0 1) surface, cross-sectional transmission electron microscopy and X-ray diffraction investigations...

The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te p...

a r t i c l e i n f o Keywords: Epitaxy Electron backscatter diffraction Fe 2 O 3 Pulsed laser deposition Eutaxy Combinatorial substrate epitaxy Perovskite SrTiO 3 The grain-by-grain orientation relationships between an Fe 2 O 3 film, grown using pulsed laser deposition, and a polycrystalline SrTiO 3 substrate were determined using electron backscatter diffraction. This high-throughput investig...