This paper describes a pulsed electron gun that can be used as an FEL, as an injector for electron linear accelerators or for rf power generation. It comprises a 1 to 5 MeV, 1 to 2 ns pulsed power supply feeding a single diode, photoexcited acceleration gap. Beam quality of a ~ 1nC charge in ~ 1 GV/m field was studied. Computations of the beam parameters as a function of electrode configuration...

Blood and blood products are irradiated with gamma rays to reduce the risk of graft versus host disease (GVHD). A simple technique using electron beams produced by a medical linear accelerator has been studied to evaluate irradiation of blood and blood products. Variations in applied doses for a single field 20 MeV electron beam are measured in a phantom study. Doses have been verified with ion...

Today, electron leakage in InP-based separate confinement laser diode has a serious effect on device performance. Control of electron leakage current is the aim of many studies in semiconductor laser industry. In this study, for the first time, a new asymmetric waveguide structure with n-interlayer for a 1.325 μm InP-based laser diode with InGaAsP multi-quantum well is proposed and theoreticall...

The effect of a slight misalignment in the magnetic field on a magnetically insulated diode is investigated. It is found that a slight tilt in the magnetic field, with a minute component along the dc electric field, completely destabilizes the cycloidal electron flow in the crossed-field gap. The final state consists of the classical Brillouin flow superimposed by a turbulent background, togeth...

The sidewall defects in high quality selective epitaxial growth ~SEG! of silicon were characterized. Three different SEG diode structures were fabricated and the bulk and perimeter defects were characterized through electrical measurements and transmission electron microscopy ~TEM!. The structures investigated were SEG grown in a 1.2 mm thick wet-etched field oxide, SEG grown in 1.2 mm thick re...

Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or antiparallel spin magnetizations. In the antiparallel case the tunnel junction, at low temperatures, behaves as a nearly ideal spin diode. At elevated temperatures the diode character ...

High speed and low power consumption are vital in ICs for high-speed optical communications systems. Some of the competing IC elements in this field include: Si-BJT (Silicon Bipolar Transistor), Si-CMOS (Silicon Field Effect Transistor), SiGe-BJT (Silicon Germanium Bipolar Transistor), GaAs-HBT (Gallium Arsenide Heterobipolar Transistor), GaAs-FET (Gallium Arsenide Field Effect Transistor), and...

introduction: to investigate the ultrastructural changes of dentin irradiated with 980-nm diode laser under different parameters and to observe the morphological alterations of odontoblasts and pulp tissue to determine the safety parameters of 980-nm diode laser in the treatment of dentin hypersensitivity (dh). methods: twenty extracted human third molars were selected to prepare dentin discs. ...

We report novel photovoltaic (PV) switching based on the low exciton-binding energy property of an organic heptazole (C26H16N2) thin film after fabrication of an heptazole-based Schottky diode. The Schottky diode cell displayed an instantaneous voltage of 0.3 V as an open circuit voltage (VOC) owing to the work function difference between the Schottky and ohmic electrode under deep blue illumin...