Nickel films of 300 nm thickness were deposited by electron beam evaporation at room temperature on 316 stainless steels. Corrosion studies of Ni coated 316 SS have been performed after N+ ion implantation at different energies of 20, 40, 60 and 80 keV. The structure and surface morphology of the films were evaluated using X-ray diffraction (XRD), atomic force microscope (AFM) an...

We present the results of measurements ion composition plasma generated by an accelerated electron beam in forevacuum pressure range. It has been found that main contribution to ionization processes comes from electrons. shown that, during electron-beam evaporation metal or ceramic targets, number ions evaporated materials significantly exceeds produced residual atmosphere and admitted gases. T...

We report on the low temperature growth, by molecular beam epitaxy (375 C) and electron-beam evaporation (300 C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke G...

Analysis of biaxial texture of MgO films grown by ion-beam-assisted deposition ~IBAD! has been performed using a quantitative reflection high-energy electron diffraction ~RHEED! based method. MgO biaxial texture is determined by analysis of diffraction spot shapes from single RHEED images, and by measuring the width of RHEED in-plane rocking curves for MgO films grown on amorphous Si3N4 by IBAD...

We describe the design and application of a surface electron microscope which has been constructed to study the in situ growth dynamics occurring on III-V semiconductor surfaces during molecular beam epitaxy. Mirror electron microscopy and photo-emission electron microscopy (PEEM) are used to ellucidate the physics of Langmuir (free) evaporation of GaAs. Of particular interest is the formation ...

Few-layer black phosphorus (BP) attracts much attention owing to its high mobility and thickness-tunable band gap; however, compared with the commonly studied transition metal dichalcogenides (TMDCs), BP has the unfavorable property of degrading in ambient conditions. Here, we propose an inverted dual gates structure of ultrathin BP FET to research the air adsorption on BP. In fabrication proce...

We compare low frequency noise in magnetic tunnel junctions with MgO barriers prepared by electron-beam evaporation with those prepared by radiofrequency sputtering, both showing a high tunneling magnetoresistance. The normalized noise parameter in the parallel state of junctions with evaporated barriers is at least one order of magnitude lower than that in junctions with sputtered barriers, an...