The impact of laterally non-uniform carrier lifetime on the determination of the lifetime from photoconductance-based measurements, based on the self-consistent method proposed by Trupke and Bardos, is investigated using a simple model. It is shown that the method can result in an overestimation of the mean lifetime, with the magnitude of the error mainly dependent on the distribution of the ef...

In this paper, generation-type drain current transients, in advanced (down to 50nm gate-length) floating-body PD SOI MOSFETs are investigated by 2D numerical simulation in weak inversion operation. An original compact analytical model is derived for the pure transient weak inversion operation and validated on both elementary and realistic 2D structures. The proposed sub-threshold transient comp...

For infrared photo-detection in mid-wavelength and long-wavelength range, mercury cadmium telluride (MCT) semiconductor alloys remain the most widely used material system despite its major disadvantages of intrinsic Auger recombination and small effective mass. Type-II superlattices (T2SL) have been proposed as possible alternatives to MCT because they may overcome these problems by flexible an...

The outstanding performance of hybrid organic-inorganic perovskites (HOIPs) in photovoltaic devices is made possible by, among other things, outstanding semiconducting properties: long real charge-carrier diffusion lengths, L, of up to 5 and possibly even 10 μm, as well as a lifetime, τ of ~1 μs or more in single crystal and polycrystalline films. 1–9 Top electronic transport materials will hav...

An AlxGa1-xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1x10 cm and a mobility of 1.9 x 10 cm/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible...

We demonstrate reduction of the free-carrier lifetime in a silicon nanowaveguide from 3 ns to 12.2 ps by applying a reverse bias across an integrated p-i-n diode. This observation represents the shortest free-carrier lifetime demonstrated to date in silicon waveguides. Importantly, the presence of the p-i-n structure does not measurably increase the propagation loss of the waveguide. We derive ...

Title of Thesis: CONTACTLESS SPECTRAL-DEPENDENT MEASUREMENT OF BULK LIFETIME AND SURFACE RECOMBINATION VELOCITY IN SILICON PHOTOVOLTAIC MATERIALS John Frederick Roller, Master of Science 2016 Thesis Directed By: Dr. Mario Dagenais, ECE Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in compl...

We have investigated the photoluminescence (PL) of in individual single-walled carbon nanotubes (SWNTs) placed in field-effect transistor structures to study carrier transport in the SWNT. The relation between the recombination lifetime and carrier transit time has been evaluated from the drain-field dependence of PL intensity. Time-resolved photoluminescence of SWNTs dispersed in surfactant so...

for three different back surface recombination velocities (BSRV). The calculations reveal that the carrier lifetime limits the screen-printed (SP) EFG Si cell efficiency for lifetimes below -30 /-Is. For a 300 /-1m thick device, the carrier lifetime should be greater than 30 /-Is to realize the full benefit of a low BSRV. Therefore, lifetime enhancement is essential for achieving high efficienc...

We study noise transfer from pump to signal in silicon Raman amplifiers, with particular emphasis on the regimes of strong cumulative free-carrier absorption and heavy pump depletion. We calculate the relative intensity noise (RIN) transfers in copumped and counterpumped amplifiers and provide intuitive explanations for RIN peculiarities. We show that noise transfer at low frequencies may be su...