A 2-bit operational metal/silicon-oxide-nitride-oxidesilicon (MONOS/SONOS) nonvolatile memory using an asymmetric double-gate (ASDG) MOSFET was studied to double flash memory density. The 2-bit programming and erasing was performed by FowlerNordheim (FN) tunneling in a NAND array architecture using individually controlled gates. A threshold voltage shift of programmed states for the 2-bit opera...

In this research work, a Cylindrical Surrounding Double-Gate (CSDG) MOSFET design in stacked-Dual Metal Gate (DMG) architecture has been proposed to incorporate the ability of gate metal variation channel field formation. Further, internal gate's threshold voltage ( V TH1 ) could be reduced compared external TH2 by arranging work-function Double devices. Therefore, device CSDG realized instigat...

Double gate MOSFET is widely used for sub-50nm technology of transistor design .They have immunity to short channel effects, reduced leakage current and high scaling potential. The single gate Silicon–on-insulator (SOI) devices give improved circuit speed and power consumption .But as the transistor size is reduced the close proximity between source and drain reduces the ability of the gate ele...

Abstract In the nanoscale regime, the double-gate MOSFET can provide superior short-channel behavior. For this structure, device scaling issues are explored. Gate length scaling will be limited by the ability to control off-state leakage current due to quantum tunneling and thermionic emission between the source and drain as well as band-to-band tunneling between the body and drain. Lateral S/D...