We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown graphene using wet chemical processing. An ammonium fluoride solution was found effective in converting pristine hole doping into electron doping in addition to the mobility improvement of charge carriers. We verified the doping by electrical measurements, Raman spectroscopy and X-ray photoelectron spectroscopy...

the structural stabilities, geometry and electronic properties of c24 and some its heterofullerenederivatives are compared at the b3lyp/6-311-efg**//b3lyp/6-31+g* level of theory. vibrationalfrequency calculations show that all the systems are true minima. the calculated binding energies ofheterofullerenes show c24 as the, most stable fullerenes by 9.03ev/atom. while decreasing bindingenergy in...

BACKGROUND Current anti-doping in competitive sports is advocated for reasons of fair-play and concern for the athlete's health. With the inception of the World Anti Doping Agency (WADA), anti-doping effort has been considerably intensified. Resources invested in anti-doping are rising steeply and increasingly involve public funding. Most of the effort concerns elite athletes with much less imp...

background: the high prevalence and potential side effects of anabolic-androgenic steroids (aas) misuse by athletes has made it a major public health concern. epidemiological studies on the abuse of such drugs are mandatory for developing effective preventive drug control programs in sports community. this study aimed to investigate the prevalence of aas abuse and their association with some ps...

BACKGROUND For effective deterrence methods, individual, systemic and situational factors that make an athlete or athlete group more susceptible to doping than others should be fully investigated. Traditional behavioural models assume that the behaviour in question is the ultimate end. However, growing evidence suggests that in doping situations, the doping behaviour is not the end but a means ...

This paper investigates the amount of doping concentration in silicon semiconductor using optical principle.  Both donor and acceptor impurities of n type and p-type silicon semiconductor materials are computed at wavelength of 1550 nm. During the computation of donor and acceptor impurities, both reflection and absorption losses are considered. Theoretical result showed that transmitted intens...

Many potential applications of graphene require its precise and controllable doping with charge carriers. Being a two-dimensional material graphene is extremely sensitive to surface adsorbates, so its electronic properties can be effectively modified by deposition of different atoms and molecules. In this paper, we review two mechanisms of graphene doping by surface adsorbates, namely electroni...

Two types of single crystal Bi2Se3 samples are prepared which allow us to span the surface doping range investigated in the main text. For the high doping level samples where ED = 0.28 eV below EF , stoichiometric mixture of Bi and Se are used. And for the low doping level samples where ED = 0.06 eV, the initial mixture of Bi:Se = 2:4.06 are used. ED in between these two levels are tuned throug...