The effects of doping on the transport properties of Ca5Al2Sb6 are investigated using first-principles electronic structure methods and Boltzmann transport theory. The calculated results show that a maximum ZT value of 1.45 is achieved with an optimum carrier concentration at 1000 K. However, experimental studies have shown that the maximum ZT value is no more than 1 at 1000 K. By comparing the...

The impact of dopant atoms in transistor functionality has significantly changed over the past few decades. In downscaled transistors, discrete dopants with uncontrolled positions and number induce fluctuations in device operation. On the other hand, by gaining access to tunneling through individual dopants, a new type of devices is developed: dopant-atom-based transistors. So far, most studies...

This letter demonstrates a white organic light-emitting diode sOLEDd with high color stability fabricated by using a single organic white-emitting layer. The dopants were introduced prior to the device fabrication process through organic solid solution process formed by high-temperature and high-pressure fusion process. A high band gap organic material, a-naphthlyphenylbiphenyl diamine, was ado...

We report a chemically conjugated bilayer graphene field effect transistor demonstrating a high on/off ratio without significant degradation of the on-current and mobility. This was realized by introducing environmentally stable benzyl viologen as an electron-donating group and atmospheric dopants as an electron-withdrawing group, which were used as dopants for the bottom and top of the bilayer...

We report on three-dimensional (3D) imaging of individual Gd dopant atoms in a thin (∼2.3  nm) foil of SrTiO3, using quantitative scanning transmission electron microscopy. Uncertainties in the depth positions of individual dopants are less than 1 unit cell. The overall dopant concentration measured from atom column intensities agrees quantitatively with electrical measurements. The method is a...

We identify contributions to the valence band of the nanosized BaFe12−2xCoxTixO19 barium ferrite particles, from the cobalt and titanium dopants. Resonant photoemission results show that cobalt and titanium dopants strongly hybridize with the barium ferrite matrix. Fano resonances are identifi ed in the valence band region, at the Ba (5s), Ti (3p) and Co (3p) thresholds, and there are signifi c...

Several doped semiconductors, in contrast to heavily-doped silicon and germanium, host extremely mobile carriers, which give rise to quantum oscillations detectable in relatively low magnetic fields. The small Fermi energy in these dilute metals quantifies the depth of the Fermi sea. When the carrier density exceeds a threshold, accessible thanks to the long Bohr radius of the parent insulator,...

In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measureme...

We identify contributions to the valence band of the nanosized BaFe12−2xCoxTixO19 barium ferrite particles, from the cobalt and titanium dopants. Resonant photoemission results show that cobalt and titanium dopants strongly hybridize with the barium ferrite matrix. Fano resonances are identifi ed in the valence band region, at the Ba (5s), Ti (3p) and Co (3p) thresholds, and there are signifi c...

The determining factor of the bulk properties of doped Si is the column rather than the row in the periodic table from which the dopants are drawn. It is unknown whether the basic properties of dopants at surfaces and interfaces, steadily growing in importance as microelectronic devices shrink, are also solely governed by their column of origin. The common light impurity P replaces individual S...