The problem of a steady-state slip pulse of (nite size between dissimilar materials is studied. It is shown that for a Coulomb friction law, there is a continuous set of possible solutions for any slip propagation velocity and any slip length. These solutions are, however, nonphysical because they show a singular behaviour of the slip velocity at one extremity of the pulse, which implies a crac...

In this paper, we report on an experimental study of spontaneous, mixed-mode, crack propagation in weakly bonded similar and dissimilar materials. A unique experimental configuration is proposed to induce spontaneous crack growth events along the interfaces. The cracks nucleate from tiny circular holes and are triggered by an exploding wire. They subsequently propagate under the action of a con...

The problem of crack deflection in bimaterial systems is considered in this paper. The material combinations may be of piezoelectric-piezoelectric, or one is piezoelectric and the other is not. Based on the Stroh formulation for anisotropic material, Green’s functions for various bimaterial combinations are presented within the framework of two-dimensional electroelasticity, allowing the crack ...

It has been shown recently that steady frictional sliding along an interface between dissimilar elastic solids with Coulomb friction acting at the interface is ill-posed for a wide range of material parameters and friction coefficients. The ill-posedness is manifest in the unstable growth of interfacial disturbances of all wavelengths, with growth rate inversely proportional to the wavelength. ...

The electronic properties of epitaxial semiconductors are strongly modified by the inclusion of semi-metallic nanoparticles grown in the semiconductor. For example, epitaxial semi-metallic nanoparticles can donate carriers, pin Fermi levels, shorten electron–hole recombination times, enhance electron tunneling and increase scattering of phonons in semiconductor host layers. There are dozens of ...

Laser micro-welding is an advanced manufacturing method today applied in various domains. However, important physical limitations have prevented so far to demonstrate its applicability silicon (Si) and other technology-essential semiconductors. Concentrating on circumventing the optical limits deliverable energy density at interfaces between narrow-gap materials with intense infrared light, fir...