نتایج جستجو برای: dimensional fet model

تعداد نتایج: 2410851  

Journal: :Cancer research 2008
Jing Wang Limin Yang Junhua Yang Karen Kuropatwinski Wang Wang Xiao-Qiong Liu Jennie Hauser Michael G Brattain

FET cells, derived from an early-stage colon carcinoma, are nontumorigenic in athymic mice. Stable transfection of a dominant-negative transforming growth factor beta (TGFbeta) type II receptor (DNRII) into FET cells that express autocrine TGFbeta shows loss of TGFbeta signaling and increased tumorigenicity in vivo indicating tumor suppressor activity of TGFbeta signaling in this model. The abi...

2011
Y. S. Chauhan D. D. Lu

FinFET and UTBSOI (or ETSOI) FET are the two promising multi-gate FET candidates for sub-22nm CMOS technology. The BSIM-CMG and BSIM-IMG are the surface potential based physical compact models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. The BSIM-IMG model has been developed to model independent doubl...

Journal: :Respiratory care 2006
Adam G Tsai Jason D Christie Christina A Gaughan Wenceslao R Palma Mitchell L Margolis

BACKGROUND Among patients with obstructive lung disease, the correlation between clinical improvement and bronchodilator response is poor. Forced expiratory time (FET) may explain some discrepancy, but FET has received little attention. METHODS We analyzed change in FET during the 3 initial satisfactory flow-volume loops in 102 consecutive patients, 37 with normal spirometry and 65 with airfl...

2008
Jose Mauricio Marulanda Prado Ana Lucia Prado de Marulanda Ashwani K. Sharma Rajendra K. Nahar

and To my sisters Lyna Maria and Ana Maritza Without their patience, understanding support and most of all love, the completion of this dissertation would not have been possible. iii ACKOWLEDGMENTS My thanks and special appreciation to my advisor and mentor Dr. Ashok Srivastava. I am very thankful for his guidance, patience and understanding throughout my dissertation research. I would have not...

2010
Mangesh A. Bangar Wilfred Chen Nosang V. Myung Ashok Mulchandani

Available online 17 August 2010

2014
Meisam Rahmani Razali Ismail M. T. Ahmadi Komeil Rahmani Ali H. Pourasl

The approaching scaling of Field Effect Transistors (FETs) in nanometer scale assures the smaller dimension, low-power consumption, very large computing power, low energy delay product and high density as well as high speed in processor. Trilayer graphene nanoribbon with different stacking arrangements (ABA and ABC) indicates different electrical properties. Based on this theory, ABA-stacked tr...

2007
K. Afrooz A. Abdipour A. Tavakoli M. Movahhedi

An accurate and efficient modelling approach for field effect transistors (FET) as nonlinear active transmission lines is presented. The nonlinear active multiconductor transmission line (NAMTL) equations are obtained by considering the transistor as three active coupled lines operating in a nonlinear regime. This modelling procedure accurately spots the effect of wave propagation along the dev...

2016
Roodabeh Afrasiabi

Over the past decade, the field of medical diagnostics has seen an incredible amount of research towards the integration of one-dimensional nanostructures such as carbon nanotubes, metallic and semiconducting nanowires and nanoribbons for a variety of bio-applications. Among the mentioned one-dimensional structures, silicon nanoribbon (SiNR) field-effect transistors (FET) as electro-chemical na...

2016
Marc D. Piroth Norbert Galldiks Michael Pinkawa Richard Holy Gabriele Stoffels Johannes Ermert Felix M. Mottaghy N. Jon Shah Karl-Josef Langen Michael J. Eble

BACKGROUND O-(2-18 F-fluoroethyl)-L-tyrosine-(FET)-PET may be helpful to improve the definition of radiation target volumes in glioblastomas compared with MRI. We analyzed the relapse patterns in FET-PET after a FET- and MRI-based integrated-boost intensity-modulated radiotherapy (IMRT) of glioblastomas to perform an optimized target volume definition. METHODS A relapse pattern analysis was p...

2015
Bala Tripura Sundari Amrita Vishwa Vidyapeetham

The era of nanoelectronics has emerged to overcome the effects of limits of physics due to technology scaling. Hence there is a need to explore the use of advanced nanomaterials namely, graphene and carbon nanotube that can overcome the limitations of short channel effects that arise in conventional silicon based field effect transistors (FET). The high carrier mobility of these materials on a ...

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