(111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (i = 75%, E = 560 kV/ cm ) and figure-of-merit (FOM ~ 236) at room temperat...

hin film characterization is important for the semiconductor industry as it pushes for smaller and faster circuits and devices. Materials with a high dielectric constant are required for improved insulation and reduction of tunneling between layers, and low dielectric materials are needed for interconnects with reduced capacitance [1]. As feature sizes of circuits and devices approach 100 nm an...

Thin silicon nitride (Si3N4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metalinsulator-metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The characteristics of the films, which were deposited at 300C, were found to be dependent on how the PECVD film was deposited. A silicon nitride film deposited as a mu...

We apply the classical over-the-barrier (COB) model to charge transfer between highly charged ions (HCIs) and targets consisting of thin dielectric films on metals. Distances for the onset of classically allowed above-surface electron capture are obtained as a function of HCI charge state, film thickness, film permittivity, and film-metal electron binding energies. The model describes the cross...

We report here on pentacene based organic field effect transistors (OFETs) with a high-k HfO2 gate oxide. HfO2 layers were prepared by two different methods: anodic oxidation and sol–gel. A comparison of the two processes on the electrical properties of OFETs is given. Ultra thin nanoporous (20 nm) sol–gel deposited oxide films were obtained following an annealing at 450 C. They lead to high mo...

We derive a method for the determination of the dielectric constant and thickness of a thin dielectric layer, deposited on top of a thick dielectric layer which is in turn present on a metal film. Reflection of pand s-polarlzed light from the metal layer yields minima for certain angles of incidence where the light is absorbed by the metal. The thin dielectric layer causes shifts in the angles ...

Problem statement: The some optical constants polymer thin film with red dye 3-amino-7dimethylamino-2-methyl phenazine (NR) as the guest material and Polyvinylpyrrolidone (PVP) as the host material were prepared by adulteration and spin-coating methods. Approach: The values of some important parameters (refractive index n, extinction coefficient K and dielectric constant ε∞) of polymer thin fil...

Efficient light management in optoelectronic devices requires nanosystems where high optical qualities coincide with suitable device integration. The requirement of chemical and electrical passivation for integrating nanostrutures in e.g. thin film solar cells points towards the use of insulating and stable dielectric material, which however has to provide high scattering and near-fields as wel...

Structural health monitoring (SHM) is an emerging field in which smart materials interrogate structural components to predict failure, expedite needed repairs, and thus increase the useful life of those components. Piezoelectric wafer active sensors (PWAS) have been previously adhesively-bonded to structures and demonstrate the ability to detect and locate cracking, corrosion, and disbonding th...

Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-...