Czochralski silicon D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino, and L. J. Geerligs Department of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia Institut für Solarenergieforschung Hameln (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany SINTEF Materials and Chemistry, A. Getz v. 2B, 7465 Tron...

This paper describes modeling and simulation for the growth and dissolution of oxygen precipitates in Czochralski silicon(CZ) wafers during heat treatment. Growth and dissolution rates arc newly derived and inserted into a set of chemical rate equations(CILEs) and a Fokkor-Planck equation(FPE). Annealing ambients and surface conditions are taken into account for solving continuity equations in ...

Single crystals of NdVO4 were grown by the Czochralski method under ambient pressure in a nitrogen atmosphere. Obtained crystals were transparent with strong violet coloring. Temperature and angular dependences of electron paramagnetic resonance (EPR) spectra of the samples in the 3-103 K temperature range were analyzed applying Dyson like lineshape typically used for concentrated magnetic syst...

Materials processing systems, such as the Czochralski crystal growth system, are often characterized by the presence of a number of distinct materials and phases with signiicantly diierent thermophysical and transport properties. They may also contain irregular boundaries, moving interfaces and free surfaces. The understanding of the complex transport phenomena in these systems is of vital impo...

Abstract For the first time, single crystals of undoped lithium tungstate and doped by 1.25% molybdenum were grown low-temperature-gradient Czochralski technique. The standard formation enthalpies, lattices stabilization energies, heat capacity determined in temperature range 320-997 K. lattice enthalpy dependence on Mo content was constructed.

This paper introduces a photoluminescence-based technique for determining the acceptor concentration in silicon wafers by measuring the formation rate of iron-acceptor pairs. This rate is monitored by bandto-band photoluminescence in low injection, the intensity of which is proportional to the carrier lifetime. The technique is demonstrated with an iron-implanted float zone silicon wafer, heavi...