cu-mo and cu-ti contact structures were fabricated on multi-crystalline silicon substrates to provide a low resistance ohmic contact. deposition steps are done in an excellent vacuum chamber by means of electron beam evaporation and samples are then annealed for the realization of an efficient alloy layer. the effects of process parameters such as film thickness, annealing duration and temperat...

Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20-50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT-metal contact resistance and what physical mechanisms govern the ...

The real contact area of rough surfaces has significant importance in many engineering applications, such as tribology, wear, lubrication and seals. A continuous observation length-dependent mechanic model without adhesion is proposed, which assumes that the surface divided into ideal subplanes. However, ignores elastoplastic deformation asperities, standard deviation subplanes’ heights assumed...

We use the technique of bosonization to understand a variety of recent experimental results on the conductivity of a quantum wire. The quantum wire is taken to be a finite-length Luttinger liquid connected on two sides to semi-infinite Fermi liquids through contacts. The contacts are modeled as (short) Luttinger liquids bounded by localized one-body potentials. We use effective actions and the ...