The bandgap narrowing (BGN) in zincblende III–V semiconductors is calculated a finite-temperature full Random-Phase Approximation (RPA) formalism based on an isotropic dispersion model. cases of n-type and p-type quasi-neutral regions the case neutral electron–hole plasma are elaborated for technologically important materials GaAs, AlAs, InAs, GaP, InP, GaSb, InSb, zb-GaN, zb-InN, Al0.3Ga0.7As ...

One of the essential technologies in modern photonic systems are semiconductor heterostructures. The first use of a QCL as a photo-detector has been reported by [1] and was since then refined for infrared and terahertz wavelengths [2] leading to the current quantum cascade detectors (QCD). The operating principle of a QCD is outlined in Fig. 1. A ground level electron is excited to a higher sta...

An alytical expression for the dependence of the nonparabolicity parameter on shear stress is presented. At 3 GPa the nonparabolicity parameter is shown to increase by a factor of 1.7. Stress dependence of the nonparabolicity parameter is verified by comparing the density-of-states obtained analytically and from the empirical pseudopotential method, and good agreement is found. Increase in the ...

We propose a method which delivers optimal cubic GaN/AlGaN quantum well (QW) profiles such that both the Stark effect and peak intersubband absorption from the ground to the first excited electronic state, in a prescribed range of bias electric fields, are maximized. Our method relies on the Genetic Algorithm which finds globally optimal structures with a predefined number of embedded layers. W...

Transparent conducting Al-doped ZnO films were deposited by atomic layer deposition with various of Al doping concentrations. In order to explain the change in resistivity of Al-doped ZnO films depending on Al doping concentration, we investigated the correlations between the conducting property and electronic structure in terms of atomic configuration, the evolution of the conduction band and ...

The complex mobility of electrons in 3C{ and 6H{SiC subjected to intense high frequency electric elds is calculated taking into account e ects of band nonparabolicity. The electric eld, given by a dc component plus an ac component in the frequency range 0.1-100 THz, is applied along the [0001] ([111]) direction in the hexagonal (cubic) polytype. The real electron mobility presents a characteris...

This paper describes synthesis of In2S3 nanoparticles by sonochemistry method and their application to enhance solar cells performance which In2S3 nanoparticles work as co-sensitizer for the first time. In2S3 is a narrow band gap semiconductor (2 eV) with conduction band higher than TiO2. Therefore it can transfer electron to the conduction band of TiO2. The effect of different parameters such ...

Intersubband polarization couples to collective excitations of the interacting electron gas confined in a semiconductor quantum well (QW) structure. Such excitations include correlated pair excitations (repellons) and intersubband plasmons (ISPs). The oscillator strength of intersubband resonances (ISBRs) strongly varies with QW parameters and electron density because of this coupling. Using th...